中国激光, 2019, 46 (2): 0203002, 网络出版: 2019-05-09
高应变Inx Ga1-x As薄膜的结晶质量及光学特性 下载: 561次
Crystallization Quality and Optical Properties of High Strain Inx Ga1-x As Film
薄膜 应变 拉曼光谱 光致发光 分子束外延 实时监测 films strain Raman spectra photoluminescence molecular beam epitaxy real-time detection
摘要
通过分子束外延(MBE)生长技术,在GaAs(100)基片上生长出单晶Inx Ga1-x As薄膜,利用反射高能电子衍射仪(RHEED)实时监控薄膜生长情况。对Inx Ga1-x As薄膜进行了X射线衍射(XRD)测试,结果显示该薄膜为高质量薄膜,且In组分(原子数分数)为0.51。光致发光(PL)光谱测试结果表明,室温下发光峰位约为1.55 μm;由于Inx Ga1-x As薄膜中存在压应变,光谱峰位出现蓝移。Raman光谱显示GaAs-like横向光学声子(TO)模式的峰出现了明显展宽,验证了Inx Ga1-x As薄膜中存在应变。
Abstract
Single crystal InxGa1-xAs film is grown on a GaAs (100) substrate through molecular beam epitaxy (MBE) growth technique, and the growth of InxGa1-xAs film is monitored in real time by a reflective high energy electron diffractometer (RHEED). The InxGa1-xAs film is characterized by X-ray diffraction (XRD), and the InxGa1-xAs exhibits a high-quality film with the In component (atomic fraction) of 0.51. The luminescence peak at room temperature is found to be around 1.55 μm by photoluminescence (PL) spectroscopy, and the blue shift of the spectrum is observed due to the existence of compression strain in the InxGa1-xAs film. The Raman spectra show that the peak of the GaAs-like transverse (TO) optic phonon mode is obviously broadened, which proves that the strain exists in the ternary alloy InxGa1-xAs film.
亢玉彬, 唐吉龙, 张健, 方铉, 房丹, 王登魁, 林逢源, 魏志鹏. 高应变In