中国光学, 2019, 12 (1): 19, 网络出版: 2019-03-06
紫外增强硅基成像探测器进展
Silicon-based ultraviolet photodetection: progress and prospects
摘要
硅基紫外成像探测技术具有可靠性好、集成度高、容易大面阵化、成本低等优势,成为探测领域的重要研究方向。随着硅半导体工艺的持续进步以及纳米科学的发展,利用半导体技术、荧光转换材料或者低维纳米结构来增强硅基探测器的紫外响应取得了长足的进步。本文综述了国内外硅基紫外增强成像探测器件、系统应用的进展,通过回顾器件发展的历史和对研究现状的分析, 并结合紫外探测技术在天文物理、生化分析、电晕检测等领域的应用进展, 探讨了硅基紫外成像探测技术发展的趋势和挑战。
Abstract
Silicon-based photodetectors are beneficial for their reliability, integration, scalability and low cost. However, due to their shallow penetration depth for UV radiation, conventional silicon devices have very limited ultraviolet responses. Motivated by the progress of silicon-based semiconductor processing techniques and nanoscience, UV-enhanced silicon-based photodetectors have been well developed and broadly applied. In this paper, we review the progress of this technology, its materials, its processing techniques and its applications in astrophysics, biochemical analysis and corona detection, and discuss the challenges and future prospects of silicon-based UV detection in sensitive imaging technologies.
张猛蛟, 蔡毅, 江峰, 钟海政, 王岭雪. 紫外增强硅基成像探测器进展[J]. 中国光学, 2019, 12(1): 19. ZHANG Meng-jiao, CAI Yi, JIANG Feng, ZHONG Hai-zheng, WANG Ling-xue. Silicon-based ultraviolet photodetection: progress and prospects[J]. Chinese Optics, 2019, 12(1): 19.