采用磁控溅射制备Ga掺杂ZnO (GZO)/CdS双层膜在p型晶硅衬底上以形成GZO/CdS/p-Si异质结器件。纳米晶GZO/CdS双层膜的微结构、光学及电学特性, 通过XRD、SEM、XPS、紫外-可见光分光光度计和霍尔效应测试系统表征。GZO/CdS/p-Si异质结J-V曲线显示良好的整流特性。在±3 V时, 整流比IF/IR(IF和IR分别表示正向和反向电流)已达到21。结果表明纳米晶GZO/CdS/p-Si异质结具有好的二极管特性, 在反向偏压下获得高光电流密度。纳米晶GZO/CdS/p-Si异质结显示明显的光伏特性。由于CdS晶格常数在GZO和晶Si之间, 它能作为一个介于GZO和晶Si之间的缓冲层, 能有效地减少GZO和p-Si之间的界面态。因此, 我们获得了GZO/CdS/p-Si异质结明显光伏特性。

In this work, Ga doped ZnO (GZO)/CdS bilayer films were prepared on p-Si substrate by magnetron sputtering to form GZO/CdS/p-Si heterojunction device. The structural, optical and electrical properies of the nanocrystalline GZO/CdS bilayer films were studied by XRD, SEM, XPS, UV-VIS spectrophotometer and Hall effect measurement. The J-V curve of GZO/CdS/p-Si heterojunction device shows good rectifying behavior. And the value of IF/IR (IF and IR stand for forward and reverse current, respectively) at ±3 V is found to be as high as 21. The results indicate that the nanocrystalline GZO/CdS/p-Si heterojunction possesses good diode characteristic. High photocurrent density is obtained under a reverse bias. The nanocrystalline GZO/CdS/p-Si heterojunction device exhibits clear photovoltaic effect. Because the lattice constant of CdS is between GZO and Si, it can be used for a buffer layer between GZO and Si, to effectively reduce the interface states between GZO and p-Si. Therefore, we observed the clear photovoltaic effect of GZO/CdS/p-Si heterojunction.