使用对太赫兹波段有吸收效应的掺杂硅设计光子晶体结构, 使得在光子带隙内的光波被吸收, 并加上金属反射镜面将光子晶体的吸收峰和法布里.珀罗(F.P)谐振吸收峰结合, 使此结构在 0.29～0.31 THz波段达到宽频吸收, 并且在 0.31～0.34 THz波段通过测量光子晶体的反射率可以计算出对应温度。在使用商业电磁仿真软件 CST2014仿真和优化参数后, 反射率对应温度变化的变化范围是 0.09～0.36, 即最大值与最小值有 4倍之差, 这一特性表明, 此结构的反射率变化随温度变化十分明显, 是一款十分灵敏的温度传感器。此外, 在入射角不大于 40°时, 结构性能依然良好。

In this paper, the photonic crystal structure was designed using the doped silicon which has absorption effect on terahertz band. As a result, the light wave in the photonic band gap was absorbed. In addition, the reflective mirror of metal facilitated the combination of the absorption peak of photonic crystal and Fabry-Perot(F-P) resonant absorption peak. Thus, as this structure was not affected by temperature changes in 0.31-0.34 THz band, it could achieve broadband absorption. Moreover, the 0.29-0.31 THz band had the temperature sensing function. By using the commercial electromagnetic simulation software CST2014 to stimulate the optimization parameter, a photonic crystal-based temperature sensor with large incidence angle was designed. The reflectivity would change with the linear variation of temperature.