光电子快报(英文版), 2019, 15 (2): 132, Published Online: Apr. 16, 2019  

The effects of Na on the growth of Cu2ZnSnSe4 thin films using low-temperature evaporation process

Author Affiliations
1 School of Electrical and Computer Engineering, Jilin Jianzhu University, Changchun 130118, China
2 Institute of Photo Electronics Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
3 School of Physics, Nankai University, Tianjin 300071, China
Abstract
Cu2ZnSnSe4 (CZTSe) absorbers were deposited on borosilicate glass substrate using the low-temperature process, and different Na incorporation methods were applied to investigate the effects of Na on the CZTSe growth. Na was dif-fused into some of the absorbers after growth, which led to strongly improved device performance compared with Na-free cells. With the post-deposition treatment, the effect of Na on CZTSe growth was excluded, and most of Na was expected to reside at grain boundaries. The conversion efficiency of the completed device was improved due to the enhancement of open circuit voltage and fill factor. The efficiency of 2.85% was achieved at substrate temperature as low as 420 ℃.

SUN Ding, LI Yu-li, ZHANG Yu-hong, GUO Xiu-juan, ZHANG Li, ZHANG Li-xin, ZHANG Xiao-dan. The effects of Na on the growth of Cu2ZnSnSe4 thin films using low-temperature evaporation process[J]. 光电子快报(英文版), 2019, 15(2): 132.

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