光电工程, 2019, 46 (4): 18022010, 网络出版: 2019-05-04  

SiO2光学薄膜的吸收边特性

Characterictics of absorption edge of SiO2 films
作者单位
1 中国科学院光电技术研究所, 四川成都 610209
2 中国科学院大学, 北京 100049
3 电子科技大学光电科学与工程学院, 四川成都 610054
摘要
二氧化硅(SiO2)是光学系统中最常用光学薄膜材料之一, 其微观结构、缺陷等信息对于研究和提高薄膜的性能具有重要作用。本文通过电子束蒸发、离子辅助、磁控溅射方法制备 SiO2薄膜并进行测试, 计算出其吸收边光谱, 对吸收边光谱的强吸收区、e指数区、弱吸收区进行分段分析得到 SiO2薄膜的带隙宽度、带尾能量和氧空位缺陷含量数据。进一步分析三种薄膜和其在常规退火温度下的带隙宽度、带尾能量和氧空位缺陷含量的数据, 获得 SiO2薄膜的微观原子排列结构、微观缺陷信息, 并对不同镀膜技术和不同退火温度下 SiO2薄膜的原子排列结构、微观缺陷的差异和变化进行了分析和讨论。
Abstract
Silicon dioxide (SiO2) is one of the most widely used in various optical system as film material. The mi-cro-structure and defects of SiO2 films are of great importance to the functions and performance of these optical systems. In this paper, the absorption edge characteristics of single layer SiO2 films prepared by electron beam evaporation, ion assisted deposition, and magnetron sputtering are investigated in detail via calculating their ab-sorption edge spectrum, which is divided into three regions: the strong absorption, exponential absorption, and weak absorption regions. The bandgap, Urbach tail, and concentration of oxygen deficiency centers (ODC) are obtained by analyzing the measured absorption spectrum. By analyzing the bandgap, Urbach tail, and ODC data of SiO2 films prepared with different deposition techniques and annealed at different temperatures, the atomic arrangement as well as micro-defect information of SiO2 films are obtained and compared. Such information of SiO2 films are im-portant to the preparation of high-performance optical coatings employing SiO2 as the low refractive index material.

孔明东, 李斌成, 郭春, 柳存定, 何文彦. SiO2光学薄膜的吸收边特性[J]. 光电工程, 2019, 46(4): 18022010. Kong Mingdong, Li Bincheng, Guo Chun, Liu Chunding, He Wenyan. Characterictics of absorption edge of SiO2 films[J]. Opto-Electronic Engineering, 2019, 46(4): 18022010.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!