人工晶体学报, 2020, 49 (4): 570, 网络出版: 2020-06-15   

高品质6英寸N型4H-SiC单晶生长研究

Study on the Growth of High Quality 6-Inch N-type 4H-SiC Single Crystal
作者单位
1 西安理工大学自动化与信息工程学院,西安 710048
2 中科钢研节能科技有限公司,北京 100081
3 西安市电力电子器件与高效电能变换重点实验室, 西安 710048
摘要
PVT法生长SiC单晶生长腔的温场分布是影响晶体质量的重要因素。采用数值模拟研究了保温层和坩埚结构以及线圈位置对6英寸SiC晶体生长温场的影响,优化出了适合高品质6英寸SiC晶体生长温场分布,在此条件下生长无裂纹的6英寸N型4H-SiC晶体。用高分辨率X射线衍射、拉曼光谱和缺陷检测系统对所加工的SiC衬底片的质量进行了表征。测试结果表明,晶型为单一的4H-SiC,微管密度小于1 cm-2,电阻率范围为0.02~0.022 Ω?cm,X射线摇摆曲线半高宽为21.6″。
Abstract
The temperature distribution of SiC single crystal growth cavity in PVT method is an important factor affecting the crystal quality. The effects of insulation structure, crucible structure and coil position on the growth temperature field of 6-inch SiC crystal were investigated by numerical simulation. The temperature distribution suitable for high-quality 6-inch SiC crystal growth is optimized. The 6-inch SiC crystal without cracks is successfully obtained through this temperature field. Also, the quality of the SiC wafer was characterized by high resolution X-ray diffraction, Raman spectroscopy and defect detection system. The results show that the crystal is single 4H-SiC, the micropipe density is less than 1 cm-2, the resistivity range is 0.02-0.022 Ω?cm, and the full width at half maximum of X-ray rocking curve is 21.6″.

刘兵, 蒲红斌, 赵然, 赵子强, 鲍慧强, 李龙远, 李晋, 刘素娟. 高品质6英寸N型4H-SiC单晶生长研究[J]. 人工晶体学报, 2020, 49(4): 570. LIU Bing, PU Hongbin, ZHAO Ran, ZHAO Ziqiang, BAO Huiqiang, LI Longyuan, LI Jin, LIU Sujuan. Study on the Growth of High Quality 6-Inch N-type 4H-SiC Single Crystal[J]. Journal of Synthetic Crystals, 2020, 49(4): 570.

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