利用分子束外延技术,基于控制快门开关顺序的生长中断法,在GaSb衬底上生长了10周期和20周期的InAs(10 monolayer, 10 ML)/GaSb(10 ML) Ⅱ型超晶格材料。实验中,基于软件模拟对生长参数进行调控分析,实现了As-Sb高效的置换,有效地降低了界面的应力。通过双晶X射线衍射和原子力显微镜对超晶格样品表面形貌进行测试和表征,应变分别减少到0.64%和0.56%,均方根粗糙度仅为0.81 nm和0.45 nm,为后续器件的制备提供了基础。

Two type-II superlattices [InAs (10 monolayer, 10 ML)/GaSb (10 ML)] with 10 and 20 periods are grown on GaAs substrates via molecular beam epitaxy and growth interruption method based on the control of the shutter switch sequence. In the experiment, the regulation and analysis of the growth parameters are based on software simulation. The simulation denotes that As-Sb substitution is efficient and the stress of the interface is effectively reduced. Further, the surface morphologies of the superlattice samples are tested and characterized by the double-crystal X-ray diffraction and atomic force microscopy. The stresses of the superlattice samples of InAs and GaSb are reduced to 0.64% and 0.56%, respectively, and the root mean square roughnesses are 0.81 nm and 0.45 nm, respectively. The results indicate that this technique is useful for the fabrication of devices.