Photonics Research, 2019, 7 (6): 06000664, Published Online: May. 29, 2019   

Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots

Author Affiliations
1 St. Petersburg Academic University, Khlopina 8/3, St. Petersburg, 194021, Russia
2 Ioffe Institute of RAS, Politehnicheskaya 26, St. Petersburg, 194021, Russia
3 Institute for Physics of Microstuctures of RAS, Nizhny Novgorod, 603950, Russia
4 ITMO University, Kronverkskiy prospekt 49, St. Petersburg, 197101, Russia
5 University of Notre Dame, Notre Dame, Indiana 46556, USA
Abstract
GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands (InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth for microdisk lasers. A maximum 3?dB modulation frequency of 5.9?GHz was found in the microdisk with a radius of 13.5?μm operating without a heatsink for cooling. A modulation current efficiency factor of 1.5??GHz/mA1/2 was estimated.

N. V. Kryzhanovskaya, E. I. Moiseev, F. I. Zubov, A. M. Mozharov, M. V. Maximov, N. A. Kalyuzhnyy, S. A. Mintairov, M. M. Kulagina, S. A. Blokhin, K. E. Kudryavtsev, A. N. Yablonskiy, S. V. Morozov, Yu. Berdnikov, S. Rouvimov, A. E. Zhukov. Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots[J]. Photonics Research, 2019, 7(6): 06000664.

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