激光与光电子学进展, 2020, 57 (3): 032202, 网络出版: 2020-02-17
基于无掩模光刻的高精度ITO电极湿法刻蚀工艺研究 下载: 1571次
High-Precision ITO Electrode Wet Etching Technology Based on Maskless Lithography
光学设计 ITO电极 湿法刻蚀 无掩模光刻 高精度 optical design ITO electrode wet etching maskless lithography high precision
摘要
氧化铟锡(ITO)导电膜具有电阻率低、透光性好、耐高温等优点,在光电领域具有重要应用。现有加工方法得到的ITO电极尺寸一般为10~200 μm,这限制了ITO电极在微纳领域的应用,为解决此限制,在传统湿法刻蚀方法的基础上,利用无掩模光刻技术对ITO玻璃表面光刻胶进行高精度曝光,再通过优化曝光、显影及刻蚀等过程,最终加工出尺寸仅为2 μm的电极。所提方法所加工的电极具有线性度高、无钻蚀、误差小等优点,为ITO电极在微纳领域应用开发提供了有现实意义的参考。
Abstract
Indium-tin-oxide (ITO) conductive films provide low resistivity, good light transmittance, and high temperature resistance; they have important applications in the field of optoelectronics. The size of the ITO electrode obtained by the existing process method is generally 10-200 μm, which limits the application of the ITO electrode in the field of micro-nano technique. This work discusses the development of a fabrication method based on the traditional wet etching process and high-precision exposure of ITO glass surface photoresist by maskless lithography. The exposure, development, and etching processes are optimized to obtain an electrode with only 2-μm width. The developed electrode has the advantages of high linearity, no undercut, and small error, thus providing a realistic reference for the application development of ITO electrode in the micro-nano field.
殷艺, 刘志坚, 王赛杰, 武森, 严志军, 潘新祥. 基于无掩模光刻的高精度ITO电极湿法刻蚀工艺研究[J]. 激光与光电子学进展, 2020, 57(3): 032202. Yi Yin, Zhijian Liu, Saijie Wang, Sen Wu, Zhijun Yan, Xinxiang Pan. High-Precision ITO Electrode Wet Etching Technology Based on Maskless Lithography[J]. Laser & Optoelectronics Progress, 2020, 57(3): 032202.