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56 Gbps high-speed Ge electro-absorption modulator

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Abstract

A high-speed evanescent-coupled Ge waveguide electro-absorption modulator (EAM) with simple fabrication processes was realized on a silicon-on-insulator platform with a 220 nm top Si layer. Selectively grown Ge with a triangle shape was directly used for Ge waveguides of the EAM. An asymmetric p-i-n junction was designed in the Ge waveguide to provide a strong electric field for Franz–Keldysh effect. The insertion loss of the Ge EAM was 6.2 dB at 1610 nm. The EAM showed the high electro-optic bandwidth of 36 GHz at -1 V. Clear open 56 Gbps eye diagrams were observed at 1610 nm with a dynamic extinction ratio of 2.7 dB and dynamic power consumption of 45 fJ/bit for voltage swing of 3Vpp.

广告组1.2 - 空间光调制器+DMD
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DOI:10.1364/PRJ.401140

所属栏目:Silicon Photonics

基金项目:National Key Research and Development Program of China10.13039/501100012166; National Natural Science Foundation of China10.13039/501100001809;

收稿日期:2020-06-25

录用日期:2020-08-19

网络出版日期:2020-08-20

作者单位    点击查看

Zhi Liu:State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Xiuli Li:State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Chaoqun Niu:State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Jun Zheng:State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Chunlai Xue:State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Yuhua Zuo:State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Buwen Cheng:State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;Beijing Academy of Quantum Information Sciences, Beijing 100193, China

联系人作者:Buwen Cheng(cbw@semi.ac.cn)

备注:National Key Research and Development Program of China10.13039/501100012166; National Natural Science Foundation of China10.13039/501100001809;

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引用该论文

Zhi Liu, Xiuli Li, Chaoqun Niu, Jun Zheng, Chunlai Xue, Yuhua Zuo, and Buwen Cheng, "56 Gbps high-speed Ge electro-absorption modulator," Photonics Research 8(10), 1648-1652 (2020)

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