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Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors [Cover Paper]

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Abstract

With the increasing demand for high integration and multi-color photodetection for both military and civilian applications, the research of multi-wavelength detectors has become a new research hotspot. However, current research has been mainly in visible dual- or multi-wavelength detectors, while integration of both visible light and ultraviolet (UV) dual-wavelength detectors has rarely been studied. In this work, large-scale and high-quality monolayer MoS2 was grown by the chemical vapor deposition method on transparent free-standing GaN substrate. Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors was demonstrated using common semiconductor fabrication technologies such as photolithography, argon plasma etching, and metal deposition. High performance of a 280 nm and 405 nm dual-wavelength photodetector was realized. The responsivity of the UV detector reached 172.12 A/W, while that of the visible detector reached 17.5 A/W. Meanwhile, both photodetectors achieved high photocurrent gain, high external quantum efficiency, high normalized detection rate, and low noise equivalent power. Our study extends the future application of dual-wavelength detectors for image sensing and optical communication.

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DOI:10.1364/PRJ.7.001127

所属栏目:Integrated Optics

基金项目:National Key Research and Development Plan; National Science Fund for Distinguished Young Scholars; National Natural Science Foundation of China10.13039/501100001809; CAS Pioneer Hundred Talents Program; Jilin Provincial Science & Technology Department; Key Program of the International Partnership Program of CAS; Special Project for Inter-government Collaboration of the State Key Research and Development Program; Youth Innovation Promotion Association of CAS; Guangdong Province Key Research and Development Plan;

收稿日期:2019-07-24

录用日期:2019-07-31

网络出版日期:2019-09-09

作者单位    点击查看

You Wu:State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Zhiwen Li:State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Kah-Wee Ang:Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
Yuping Jia:State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Zhiming Shi:State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Zhi Huang:Shenzhen Castle Security Technology Co., Ltd., Shenzhen 518000, China
Wenjie Yu:State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Xiaojuan Sun:State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Xinke Liu:State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, Chinae-mail: liuxinke@ciomp.ac.cn
Dabing Li:State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, Chinae-mail: lidb@ciomp.ac.cn

联系人作者:Xinke Liu(liuxinke@ciomp.ac.cn); Dabing Li( lidb@ciomp.ac.cn);

备注:National Key Research and Development Plan; National Science Fund for Distinguished Young Scholars; National Natural Science Foundation of China10.13039/501100001809; CAS Pioneer Hundred Talents Program; Jilin Provincial Science & Technology Department; Key Program of the International Partnership Program of CAS; Special Project for Inter-government Collaboration of the State Key Research and Development Program; Youth Innovation Promotion Association of CAS; Guangdong Province Key Research and Development Plan;

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引用该论文

You Wu, Zhiwen Li, Kah-Wee Ang, Yuping Jia, Zhiming Shi, Zhi Huang, Wenjie Yu, Xiaojuan Sun, Xinke Liu, and Dabing Li, "Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors," Photonics Research 7(10), 1127-1133 (2019)

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