设计并制作了非对称大光腔波导结构,利用分布布拉格反射技术,实现了980 nm 波段高功率半导体激光器的稳定输出。在实验过程中,采用电子束光刻技术,结合感应耦合等离子刻蚀工艺,利用SiO₂作为硬掩模,并通过减小Ar离子的束流来减弱刻蚀过程中由于物理轰击作用对SiO₂硬掩模的消耗,制作出形貌良好、周期为890 nm、占空比为50%的分布布拉格反射器光栅;采用脊型波导激光器的制作工艺,成功制作出分布布拉格反射激光器,当器件注入电流15 A时,该激光器的输出功率高达10.7 W,斜率效率为0.73 W/A,器件阈值电流为0.95 A,中心波长为979.3 nm。该研究为GaAs基DBR半导体激光器的制作与研究提供了新思路。

An asymmetric large optical cavity waveguide structure is designed and fabricated, and a stable output of a 980 nm high power semiconductor laser is realized by combining distributed Bragg reflection (DBR) technology. The experiments use electron beam lithography technology and an inductive coupled plasma etching process with SiO2 as a hard mask. By reducing the Ar beam current, the consumption of the SiO2 hard mask due to physical bombardment is reduced. A DBR grating with good morphology, period of 890 nm, and duty cycle of 50% is fabricated. Combined with ridge waveguide laser fabrication technology, the DBR laser is successfully fabricated. Finally, when the device injection current is 15 A, the output power is up to 10.7 W, slope efficiency is 0.73 W/A, device threshold current is 0.95 A, and central wavelength is 979.3 nm. This study presents a new approach for the fabrication and research of GaAs-based DBR semiconductor lasers.