Photonics Research, 2020, 8 (5): 05000750, Published Online: Apr. 26, 2020   

Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap” Download: 775次

Author Affiliations
1 Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
2 Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
Abstract
Gallium nitride (GaN)-based light-emitting diodes (LEDs) are important for lighting and display applications. In this paper, we demonstrate green-emission (512 nm) InGaN quantum dot (QD) LEDs grown on a c-plane sapphire substrate by metal-organic chemical vapor deposition. A radiative lifetime of 707 ps for the uniform InGaN self-assembled QDs is obtained by time-resolved photoluminescence measurement at 18 K. The screening of the built-in fields in the QDs effectively improves the performance of QD LEDs. These high quantum efficiency and high temperature stability green QD LEDs are able to operate with negligible efficiency droop and with current density up to 106 A/cm2. Our results show that InGaN QDs may be a viable option as the active medium for stable LEDs.

Chunyu Zhao, Chak Wah Tang, Billy Lai, Guanghui Cheng, Jiannong Wang, Kei May Lau. Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”[J]. Photonics Research, 2020, 8(5): 05000750.

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