Chinese Optics Letters, 2020, 18 (12): 121601, Published Online: Oct. 23, 2020  

Broadband fluorescence emission in Bi-doped silica glass prepared by laser additive manufacturing technology Download: 617次

Author Affiliations
1 Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, South China Normal University, Guangzhou 510006, China
2 Guangzhou Key Laboratory for Special Fiber Photonic Devices, South China Normal University, Guangzhou 510006, China
3 Guangdong Provincial Key Laboratory of Industrial Ultrashort Pulse Laser Technology, Shenzhen 518055, China
Abstract
In this work, we proposed a feasible method to prepare the Bi/Al co-doped silica glass by using laser additive manufacturing technology. Bi was uniformly doped into the silica matrix. The hydroxyl content of the glass sample was measured to be 29.36 ppm. Using an 808 nm laser diode as the excitation source, a broadband near-infrared emission from 1000 to 1600 nm was obtained. The emission peak was centered at 1249 nm, and the corresponding FWHM was more than 400 nm. The results show that the laser additive manufacturing technology is promising to fabricate highly homogeneous Bi-doped core materials with broader emission band, which is beneficial to solving the communication capacity crunch and promotes the development of fiber communication in the upcoming fifth and sixth generation systems.

Jiaming Li, Chuangkai Li, Yun Chen, Nan Zhao, Zhiyun Hou, Qingmao Zhang, Guiyao Zhou. Broadband fluorescence emission in Bi-doped silica glass prepared by laser additive manufacturing technology[J]. Chinese Optics Letters, 2020, 18(12): 121601.

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