光学学报, 2019, 39 (9): 0914001, 网络出版: 2019-09-09
1.55-μm大功率高速直调半导体激光器阵列 下载: 1375次
1.55-μm High-Power High-Speed Directly Modulated Semiconductor Laser Array
激光器 1.55-μm 直调激光器; 大功率 高带宽 激光器阵列 lasers 1.55-μm directly modulated lasers; high power wide bandwidth laser array
摘要
提出一种基于AlGaInAs材料的1.55-μm波段的大功率、高速直调分布反馈(DFB)激光器阵列。采用具有良好温度特性和高微分增益的AlGaInAs材料作为量子阱和波导层以实现大功率与高带宽的输出;引入稀释波导结构来减小有源区内部损耗,同时降低远场发散角;采用悬浮光栅并优化耦合系数以实现大注入电流下的单模稳定工作。最终实现了1.5-μm波段5波长的大功率直调激光器阵列,阵列波长间隔约为5 nm,室温连续波(CW)工作时各通道输出光功率均大于100 mW,单通道最大输出光功率为160 mW,500 mA工作电流范围内边模抑制比大于55 dB,小信号调制带宽可达7 GHz,激光器最小线宽为520 kHz,相对强度噪声低于-145 dB/Hz。
Abstract
We design and fabricate a 1.55-μm high-speed high-power distributed feedback laser array based on the AlGaInAs material. We adopt the AlGaInAs material that exhibits good temperature characteristics and high differential gain as a quantum well and waveguide layer to achieve high power and wide bandwidth. Further, we use a dilute waveguide to reduce internal loss and optimize the far-field divergence angle; subsequently, a suspended grating is used to optimize coupling coefficient, and the single-mode stable operation with large injection current is realized. Based on this optimized material structure, we fabricate a 1.5-μm laser array at five different wavelengths. In continuous-wave operation at room temperature, each laser in the array can achieve a single-mode lasing power of greater than 100 mW (the maximum output power of a single laser is 160 mW), a side-mode suppression ratio of greater than 55 dB, a small-signal-modulation bandwidth of 7 GHz, the narrowest linewidth of 520 kHz, and a relative intensity noise of -145 dB/Hz.
王皓, 张瑞康, 陆丹, 王宝军, 黄永光, 王圩, 赵玲娟. 1.55-μm大功率高速直调半导体激光器阵列[J]. 光学学报, 2019, 39(9): 0914001. Hao Wang, Ruikang Zhang, dan Lu, Baojun Wang, Yongguang Huang, Wei Wang, Lingjuan Zhao. 1.55-μm High-Power High-Speed Directly Modulated Semiconductor Laser Array[J]. Acta Optica Sinica, 2019, 39(9): 0914001.