Chinese Optics Letters, 2020, 18 (10): 103101, Published Online: Aug. 3, 2020   

Optical characteristics of ultrathin amorphous Ge films Download: 791次

Author Affiliations
1 Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
4 Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
Abstract
Ultrathin Ge films with thickness of about 15 nm at different deposition temperatures were prepared by electron beam evaporation. Spectral measurement results showed that as the deposition temperature increased from 100°C to 300°C, the transmittance of the films in the wavelength range from 350 nm to 2100 nm decreased. After annealing in air at 500°C, the transmittance significantly increased and approached that of uncoated fused quartz. Based on the Tauc plot method and Mott–Davis–Paracrystalline model, the optical band gap of Ge films was calculated and interpreted. The difference in optical band gap reveals that the deposition temperature has an effect on the optical band gap before annealing, while having little effect on the optical band gap after annealing. Furthermore, due to oxidation of Ge films, the optical band gap was significantly increased to ~5.7 eV after annealing.

Meng Guo, Hongbo He, Kui Yi, Shuying Shao, Guohang Hu, Jianda Shao. Optical characteristics of ultrathin amorphous Ge films[J]. Chinese Optics Letters, 2020, 18(10): 103101.

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