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Optical characteristics of ultrathin amorphous Ge films

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Abstract

Ultrathin Ge films with thickness of about 15 nm at different deposition temperatures were prepared by electron beam evaporation. Spectral measurement results showed that as the deposition temperature increased from 100°C to 300°C, the transmittance of the films in the wavelength range from 350 nm to 2100 nm decreased. After annealing in air at 500°C, the transmittance significantly increased and approached that of uncoated fused quartz. Based on the Tauc plot method and Mott–Davis–Paracrystalline model, the optical band gap of Ge films was calculated and interpreted. The difference in optical band gap reveals that the deposition temperature has an effect on the optical band gap before annealing, while having little effect on the optical band gap after annealing. Furthermore, due to oxidation of Ge films, the optical band gap was significantly increased to ~5.7 eV after annealing.

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DOI:10.3788/COL202018.103101

所属栏目:Thin Films and Optics at Surfaces

基金项目:This work was supported by the National Key Research and Development Project of China (No. 2016YFE0104300).

收稿日期:2020-03-28

录用日期:2020-06-01

网络出版日期:2020-07-30

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郭猛:Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
贺洪波:Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
易葵:Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
邵淑英:Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
胡国行:Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
邵建达:Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China;Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China

联系人作者:贺洪波(hbhe@siom.ac.cn)

备注:This work was supported by the National Key Research and Development Project of China (No. 2016YFE0104300).

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引用该论文

Meng Guo, Hongbo He, Kui Yi, Shuying Shao, Guohang Hu, Jianda Shao, "Optical characteristics of ultrathin amorphous Ge films," Chinese Optics Letters 18(10), 103101 (2020)

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