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Impulse response of Ge2Sb2Te5-based ultrafast photodetector integrated with SOI waveguide

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Abstract

The impulse response for a phase-change material Ge2Sb2Te5 (GST)-based photodetector integrated with a silicon-on-insulator (SOI) waveguide is simulated using finite difference time domain method. The current is calculated by solving the drift-diffusion model for short pulse (~10 fs) excitation for both of the stable phases. Full width at half-maximum values of less than 1 ps are found in the investigation. The crystalline GST has higher 3 dB bandwidth than the amorphous GST at a 1550 nm wavelength with responsivities of 21 A/W and 18.5 A/W, respectively, for a 150 nm thick GST layer biased at 2 V. A broad spectrum can be utilized by tuning the device using the phase-change property of material in the near infrared region.

Newport宣传-MKS新实验室计划
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DOI:10.3788/COL201917.100401

所属栏目:Detectors

基金项目:This work was supported by the Science and Engineering Research Board (SERB), Department of Science and Technology, Government of India under the Early Career Research (ECR) award scheme with project file No. ECR/2016/001950.

收稿日期:2019-05-23

录用日期:2019-07-26

网络出版日期:2019-08-27

作者单位    点击查看

Vibhu Srivastava:Indian Institute of Information Technology-Allahabad, Prayagraj 211015, India
Prateek Mishra:Indian Institute of Information Technology-Allahabad, Prayagraj 211015, India
Sunny:Indian Institute of Information Technology-Allahabad, Prayagraj 211015, India

联系人作者: Sunny(sunnymeharwal@gmail.com)

备注:This work was supported by the Science and Engineering Research Board (SERB), Department of Science and Technology, Government of India under the Early Career Research (ECR) award scheme with project file No. ECR/2016/001950.

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引用该论文

Vibhu Srivastava, Prateek Mishra, Sunny, "Impulse response of Ge2Sb2Te5-based ultrafast photodetector integrated with SOI waveguide," Chinese Optics Letters 17(10), 100401 (2019)

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