为在新型太阳能电池等先进光电器件中成功应用ZnO纳米柱阵列,需要以高沉积速率生长ZnO纳米柱,并能够对纳米柱的形貌与光电物理性质进行操控。使用电沉积方法制备ZnO纳米柱阵列,在主电解液中加入了六次甲基四胺,对所制备的ZnO纳米柱阵列的形貌与光电物理性质进行了测试分析。六次甲基四胺能够大幅提升ZnO纳米柱的生长速率,相比未使用六次甲基四胺的电解液配方,ZnO纳米柱的生长速率提高了356%。同时,纳米柱的直径与阵列密度得到有效降低,纳米柱间距增大至58 nm。六次甲基四胺的引入使ZnO纳米柱的光学带隙约红移了0.12 eV。在六次甲基四胺的作用下,ZnO纳米柱的斯托克斯位移减小0.15 eV,非辐射复合受到抑制。通过使用六次甲基四胺,实现了ZnO纳米柱的快速电沉积生长,同时实现了对纳米柱的光学带隙、近带边发射、斯托克斯位移、非辐射复合等光电物理性质的操控。

In order to attain the successful implantation of ZnO nanorod arrays in advanced optoelectronic devices, it is necessary to achieve the fast growth of nanorods and the morphology and photoelectric property control of nanorods. Electrodeposition is used to fabricate the ZnO nanorod arrays. Hexamethylenetetramine is added into the basic electrolytes and the nanorods are characterized to analyze their morphological, optical and electrical properties. Hexamethylenetetramine results in a boost in the growth rate of ZnO nanorods. Compared with those of samples without using hexamethylenetetramine, the growth rate of nanorods using hexamethylenetetramine is increased by 356%. Hexamethylenetetramine leads to the decrease in the diameter and density of nanorods. As a result, the distance between nanorods is enlarged to 58 nm. Hexamethylenetetramine results in the redshift of the optical band gap energy of ZnO nanorods by ~0.12 eV. Hexamethylenetetramine leads to the decrease in the Stokes shift by 0.15 eV, which suppresses the non-radiative recombination in ZnO nanorods. The use of hexamethylenetetramine achieves the fast growth of ZnO nanorods as well as their tailored physical properties, such as optical band energy, near band edge emission, Stokes shift, and non-radiative recombination.