目前与互补金属氧化物半导体工艺兼容且具有高发光效率的硅基光源的制作技术尚不成熟,针对这一问题,研究了一种新型多晶硅发光器件。首先研究了该结构在反偏电压下可能存在的各种雪崩模式(带间跃迁、轫致辐射、空穴在轻和重质量带之间的带内跃迁、高场条件下的电离和间接带间重组),对不同雪崩模式下的发光机理进行了理论分析;然后研究了器件内部的空穴和电子在反偏电压下的漂移及扩散情况,指出载流子注入增加了参与雪崩倍增过程的载流子数量,进而使碰撞电离率提高;最后对器件的电场、光谱、电流与光强等数据进行分析,对量子效率和光电转换效率进行计算,验证了所研究结构通过载流子注入实现了碰撞电离率的提高,进而实现了发光效率的提高,其中量子效率为5.9×10 -5,光电转换效率为4.3×10 -6。

Presently, the manufacturing technology of silicon-based light sources that are compatible with complementary metal oxide semiconductor processes and have high luminous efficiency is immature. To address this problem, a new structure for a poly-silicon light-emitting device is proposed in this paper. The possible avalanche modes (interband transition, bremsstrahlung, intraband transition of holes between light and heavy mass bands, ionization under high-field conditions, and indirect interband reorganization) of the device under reverse bias voltage are studied. The mechanism is analyzed theoretically; moreover, the drift and diffusion of holes and electrons inside the device under reverse bias voltage are studied, which reveals that carrier injection increases the number of carriers involved in the avalanche multiplication process and can lead to an increase in the impact ionization rate. Furthermore, the electric field, spectrum, current, and light intensity of the device are analyzed. The quantum efficiency and photoelectric conversion efficiency are calculated; it is concluded that the impact ionization rate is improved by the carrier injection. The improvement in the device''s luminous efficiency is achieved by the improvement in the impact ionization rate, for which the quantum efficiency is 5.9×10 -5 and photoelectric conversion efficiency is 4.3×10 -6.