光学学报, 2020, 40 (20): 2025001, 网络出版: 2020-09-19
多层PtSe2/TiO2纳米棒肖特基结紫外光电探测器 下载: 1128次
Multilayer PtSe2/TiO2 NRs Schottky Junction for UV Photodetector
光电子学 紫外光电探测器 TiO2纳米棒阵列 PtSe2薄膜 图像传感器 optoelectronics ultraviolet photodetector TiO2 nanorod array PtSe2 film image sensor
摘要
提出一种基于多层PtSe2/TiO2纳米棒(NR)阵列的肖特基结紫外光电探测器。多层PtSe2薄膜和TiO2 NRs分别由化学气相沉积法和水热法制备,通过湿转移法,即可获得具有上下结构的多层PtSe2/TiO2 NRs肖特基结器件。光电测试结果表明,所设计的器件对波长为365 nm的紫外光具有较明显的响应,开关比高达5.5×10 4,响应度和比探测率分别可达57 mA/W和8.36×10 11 Jones。此外,器件在空气环境中非常稳定,在空气中放置5周后,光电流基本没有下降。最后,对单个器件的图像传感特性进行研究,结果表明,PtSe2/TiO2探测器可用作图像传感器,能对简单的紫外图形进行成像。
Abstract
Herein, a Schottky junction UV photodetector based on multilayer PtSe2/TiO2 nanorod (NR) arrays is proposed. The multilayer PtSe2 film and TiO2 NRs are synthesized using chemical vapor deposition and hydrothermal methods, respectively. The wet transfer method is used to fabricate the multilayer PtSe2/TiO2 NRs Schottky junction device with upper and lower structures. Photoelectric measurement results show that the designed device exhibits a high sensitivity to 365-nm UV light. The switch ratio of the device can reach as high as 5.5×10 4, the responsivity and specific detectivity are 57 mA/W and 8.36×10 11 Jones, respectively. Moreover, the device shows a good stability and the photocurrent remains nearly unchanged after storage in air for 5 weeks. Finally, the image sensing characteristics of a single device are investigated, which confirm that the PtSe2/TiO2 photodetector can be used as an image sensor to achieve simple UV pattern imaging.
陈红云, 鲁玉, 李辰, 赵兴远, 张秀星, 张致翔, 罗林保. 多层PtSe2/TiO2纳米棒肖特基结紫外光电探测器[J]. 光学学报, 2020, 40(20): 2025001. Hongyun Chen, Yu Lu, Chen Li, Xingyuan Zhao, Xiuxing Zhang, Zhixiang Zhang, Linbao Luo. Multilayer PtSe2/TiO2 NRs Schottky Junction for UV Photodetector[J]. Acta Optica Sinica, 2020, 40(20): 2025001.