In this work, we report the fabrication of an optical waveguide by single-energy H+ ion implantation in the Er3+-doped phosphate glass. The ion implantation conditions are with energy of 0.4 MeV and a fluence of 8.0×1016 ions/cm2. The dark mode spectrum of the waveguide structure was measured by the prism coupling experiment. The refractive index change along with the penetration depth was fitted by using the reflectivity calculation method (RCM). Finally, the calculated near-field light intensity distribution shows superior waveguide properties, which demonstrates its promis-ing potentials for compact optical integrated devices.

Due to the limit of the pixel size of the charge-coupled device (CCD) or complementary metal oxide semiconductor (CMOS) sensor, the traditional differential algorithm has a limited measuring accuracy by determining the critical an-gle in integral pixel. In this paper, we present a practical algorithm based on the centroid value of the reflective ratio around the critical angle pixel to address the traditional differential algorithm problem of determining the critical angle under sub-pixel in a critical angle refractometer (CAR). When the change of refractive index (RI) of a liquid sample is beyond the sensitivity of the traditional differential algorithm, the RI of the liquid can be obtained by using the cen-troid value of reflectivity around the critical angle pixel. The centroid value is associated with the RI change of the liq-uid in sub-pixel. Demonstrated by both theoretical analyses and experimental results using saline solutions with RI that changes in sub-pixel tested through the reflective CAR, the algorithm is found to be computationally effective and ro-bust to expand the measuring accuracy of the Abbe-type refractometer in sub-pixel.

Epitaxial growths of the GaAs/AlGaAs-based 940 nm infrared light emitting diodes (LEDs) with dual junctions were carried out by using metalorganic chemical vapor deposition (MOCVD) with different doping concentrations and Al contents in AlxGa1-xAs compound. And their optoelectric properties show that the optimal design for tunneling region corresponds to P++ layer with hole concentration up to 1×1020 cm-3, N++ layer electron concentration up to 5×1019 cm-3 and constituent Al0.2Ga0.8As in the tunneling junction region. The optimized dual-junction LED has a forward bias of 2.93 V at an injection current of 50 mA, and its output power is 24.5 mW, which is 104% larger than that of the single junction (12 mW). Furthermore, the optimized device keeps the same spectral characteristics without introducing ex-cessive voltage droop.

In this work, the perovskite solar cells (PSCs) were fabricated with the bandgap-tunable (FA)x(MA)1-xPbI3 absorber layers through a facile two-stage deposition route. The doping was realized by adding the formamidinium iodide (FAI) into a precursor MAI solution. Both the surface morphology and electrochemical impedance spectra (EIS) were con-ducted to evaluate the absorber layers or solar cells. After the optimization, the best PSC performance of 14.73% was achieved at a nominal FAI content of 12.5 at.%. The performance enhancement was attributed to both the enhance-ment of visible light harvesting and carrier transport capability. Besides, the stability of a PSC device based on the single MAPbI3 absorber layer was also investigated, and a power conversion efficiency (PCE) of 11.27 % remained even after laying in vacuum for 10 days.

A switchable dual-wavelength erbium-doped fiber (EDF) laser is proposed and demonstrated. The interference filter is achieved by employing a phase-shifted fiber Bragg grating (PSFBG) combined with Sagnac loop structure. By adjust-ing polarization controller (PC) states, the birefringence effect is introduced to weaken mode competition, then stable and switchable dual-wavelength fiber laser can be realized. Based on coupled-mode theory and transmission matrix, the Sagnac loop transmission characteristics are studied. The experimental results show that the proposed fiber laser can operate in switchable dual-wavelength output mode at room temperature just by simply adjusting PC. The output wavelength range of fiber laser is 1 556.128—1 556.384 nm, the side mode suppression ratio (SMSR) is over 45 dB, and dual-wavelength spacing as small as 0.048 nm is achieved, which can be used in high-fineness dense wavelength division multiplexing (DWDM) systems and similar structures.

White organic light-emitting devices (WOLEDs) were fabricated by using a highly blue fluorescent dye of 4,4’-bis(2,2’-diphenyl vinyl)-1,1’-biphenyl (DPVBi) and a red fluorescent dye of 5H-benzo[ij]quinolizin-9-yl) eth-enyl]-4H-pyran-4-ylidene]propane-dinitrile (DCM2), together with a green fluorescent dye of 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,11H-(1)-benzopyroyran-o(6,7-8-i,j) quinolizin-11-one (C545T). The multilayer WOLEDs does not involve the doping process. The structure of the device is indium tin oxide (ITO)/ 4,4’,4’’-tris{N,-(3-methylphenyl)-N-phenylamin}triphenylamine (m-MTDATA) (55 nm)/ N,N’-bis-(1-naphthyl)-N,N’-diphenyl-1,1’-biph-enyl-4,4’-diamine (NPB) (10 nm)/ DPVBi (8 nm)/ C545T (x nm)/ DPVBi (5 nm)/ DCM2 (y nm)/ tris- (8-hydroxyquinoline) aluminum (Alq3) (60nm)/ LiF (1 nm)/ Al, where the DPVBi is introduced as a spacer. By changing the thicknesses of dual ultrathin layers of C545T and DCM2, the WOLED is obtained. When x=y=0.05, the Commission Internationale de 1’Eclairage (CIE) coordinates of the device change from (0.262 6, 0.351 4) at 4 V to (0.214 7, 0.269 3) at 12 V that are well in the white region. Its maximum luminance is 41400 cd/m2 at 13 V, and the maximum current efficiency and the maximum power efficiency are 7.95 cd/A at 6 V and 5.37 lm/W at 5 V, respectively.

Cu2ZnSnSe4 (CZTSe) absorbers were deposited on borosilicate glass substrate using the low-temperature process, and different Na incorporation methods were applied to investigate the effects of Na on the CZTSe growth. Na was dif-fused into some of the absorbers after growth, which led to strongly improved device performance compared with Na-free cells. With the post-deposition treatment, the effect of Na on CZTSe growth was excluded, and most of Na was expected to reside at grain boundaries. The conversion efficiency of the completed device was improved due to the enhancement of open circuit voltage and fill factor. The efficiency of 2.85% was achieved at substrate temperature as low as 420 ℃.

Nonlinear optical properties of tetraphenylporphyrin (H2TPP) and protonated tetraphenylporphyrin (H4TPP2+) in tolu-ene were investigated by Z-scan technique using a nanosecond laser with 5 ns pulse at 532 nm. Results show that H4TPP2+ exhibits weaker nonlinear refraction but enhanced reverse saturable absorption (RSA) and optical limiting performance in comparison with pristine H2TPP. Since no nonlinear scattering is observed in H4TPP2+ under low input fluence, and H4TPP2+ exhibits weaker nonlinear scattering signals than H2TPP under high input fluence, the enhance-ment of RSA and optical limiting performance can be attributed to the larger ratio of excited state absorption cross-section to that of the ground state of H4TPP2+. H4TPP2+ also exhibits superior optical limiting performance, even better than the benchmark RSA material C60.

This paper experimentally demonstrates a low-cost energy efficient alternative technique for long reach transfer of ac-curate reference frequency (RF) clock signals for extended reach RF distribution systems. This is achieved by adoptingdistributed forward Raman amplification and vertical cavity surface emitting laser (VCSEL) technology. A class 10GVCSEL is directly modulated with a 2 GHz RF clock signal. By exploiting a forward Raman pump with the flat gainof 8.6 dB, a 100.8-km-long standard single mode fiber (SMF) RF clock distribution is experimentally achieved. Amaximum phase noise of .117.66 dBc/Hz at offset frequency of 100 kHz and an RF clock jitter (RMS) of 5.36 ps isexperimentally measured for 100.8-km-long fiber transmission without forward Raman amplification. However, withthe adoption of forward Raman amplification, the measured phase noise and RMS improves to .86.59 dBc/Hz and1.7 ps, respectively. Forward Raman pumping offers distributed high flat gain over a wide spectra range (over 35.5 nm), while VCSELs offer cost effective broadband signal distribution, therefore keeping the network optics in-vestment low.

A novel optical instrument is proposed and studied to measure the deformation of each connection point for a mirror, which includes 24 multi-matrix base units and can be used in millimeter-scale signal reflection systems. Experimental investigations reveal that the error of measurement is σ=8.7×10-3 mm at a distance of 5 500 mm, which allows to measure the linear deformation of a radiotelescope with the mirror diameter of 70 m.

We experimentally compare the solar irradiance absolute radiometer (SIAR) measurement with the world radiometric reference (WRR) standard to improve the accuracy of instrument. The SIAR joined in the international pyrheliometer comparison (IPC) in 2000. The comparison results show that the calibration factors for SIAR to WRR are 0.999 220, 1.001 694, 0.998 334 and 0.997 439 in the 9th IPC, the 10th IPC, the 11th IPC and the 12th IPC, respectively. These results are added to the measurement uncertainty budget of SIAR. The repeatability of the SIAR-type absolute radiometers is also investigated. The relative error introduced by two SIAR-type absolute radiometers is within 0.25%.

In the current furniture production line, the level of automation in the stage of loading and unloading is not high enough. In order to improve its automation, a novel integer programming based method for automatically segment-ing board is proposed and a multi-sensor configuration is given. In such a configuration, we include multiple cam-eras and Lidar sensors. The cameras attached on each board are used to collect quick response (QR) code informa-tion, while Lidar sensors can obtain each board's contours information. We then formulate each board's segmenta-tion as the integer programming problem. The experimental results show that our method can achieve a very high segmentation accuracy of 95% on average.

In order to improve the super-resolution reconstruction effect of the single image, a novel multiple dictionaries learn-ing via support vector regression (SVR) and improved iterative back-projection (IBP) are proposed. To characterize the image structure, the low-frequency dictionary is constructed from the normalized brightness of low-frequency im-age patches in a discrete-cosine-transform (DCT) domain. Pixels determined by Gaussian weighting are added to the input vector to restore more high-frequency information when training the high-frequency image patch dictionary in the space domain. During post-processing, the improved IBP is employed to reduce regression errors each time. Ex-periment results show that the peak signal-to-noise ratio (PSNR)and structural similarity (SSIM) of the proposed method are enhanced by 1.6%—5.5% and 1.5%—13.1% compared with those of bicubic interpolation, and the pro-posed method visually outperforms several algorithms.

Au nanoparticles doped TiO2 nanowires (NWs) arrays with an average diameter of 100 nm were synthesized through a facile solvothermal method. Thereafter, metal/semiconductor/metal (MSM) structured detectors with Ag electrodes were fabricated on these NWs. The ultraviolet (UV) sensing characteristics of pure TiO2 and Au-doped ones (Au-TiO2) were investigated. Compared with pure TiO2, the Au-TiO2 NWs based device shows a much lower dark current of 1.5 nA at 3 V bias. The low dark current mechanism might be due to the promoted directional transmission of carriers induced by Au doping. The photoresponse is nearly one order of magnitude under 360 nm monochromatic illumina-tion. The Au-TiO2 NWs detector with simple fabrication process, low noise and good overall performance provides a broad way in fabricating UV imaging arrays.

A novel intermediate connector (IC) was formed which was composed of aluminum (Al, 3 nm)/1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN). The 3-nm-thick Al in the IC is certified to efficiently generate in-trinsic charge carriers, and the HAT-CN is proved to work as the holes injection layer (HIL) for the corresponding electroluminescent (EL) unit simultaneously. This simply IC comprehensively takes advantage of the features of the HAT-CN so as to stack two single EL units without introducing extra material. In addition to a significant enhance-ment in luminance and current efficiency, a current efficiency (CE) of 10.2 cd/A and a luminance of 2 042 cd/m2 under the current density 20 mA/cm2 of this tandem organic light emitting device (TOLED) are yielded, which are notably almost the sum of that of the two single-unit devices.

One problem associated with microcavity devices is the significant difference between the reflection spectra of fabricated porous silicon microcavity (PSM) devices and those obtained by theoretical calculation of ideal microcavity devices. To address this problem, studies were carried out to determine the effects of the refractive index dispersion, the absorption of the porous silicon layer and the fluctuation of the dielectric interface on the reflection spectra of PSM devices. The results are in good agreement with those obtained experimentally from the fabricated PSM devices, which provides a theoretical basis for the design of PSM sensors.

A method for improving lateral resolution and reducing imaging distortion of optical subtraction microscopy is pro-posed. First, an azimuthally polarized (AP) light is modulated by an annular aperture. Then, an image with higher lat-eral resolution is obtained by subtracting an image obtained by an annular AP beam from an image obtained by a ra-dially polarized beam. The simulation results demonstrate that compared with the case without the annular aperture, negative side-lobes in the effective point spread function are effectively suppressed, and the imaging quality of sub-traction microscopy is obviously enhanced.

In this paper, a novel method is proposed to characterize the operation-waveband angular resolution of the soft X-ray grazing incidence telescope. According to the method, the first is to restore the “geometric image” by removing the aperture diffraction effect from the resolution testing target image measured at visible waveband. The second is to calculate the operation-waveband resolution testing target image by the convolution of “geometric image”, diffraction point spread function and surface scattering point spread function. Finally, the operation-waveband (4.47 nm) angular resolution of 9.72" is calculated according to the operation-waveband resolution testing target image on axis. The method does not need to be performed in vacuum and to place the source away from the solar X-ray grazing incidence telescope, which greatly reduces the testing cost and improves the efficiency for the development of the soft X-ray grazing incidence telescope.