Frontiers of Optoelectronics
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2012, 5(1) Column

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Frontiers of Optoelectronics 第5卷 第1期

作者单位
摘要
The State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
Frontiers of Optoelectronics
2012, 5(1): 1
作者单位
摘要
1 Nanjing National Laboratory of Microstructures, School of Electronic Science and Engineering, School of Physics, Nanjing University, Nanjing 210093, China
2 Department of Applied Physics, Nanjing University of Technology, Nanjing 210009, China
amorphous silicon carbide (a-SiC) optical band gap photo-conductivity dark conductivity electroluminescence (EL) 
Frontiers of Optoelectronics
2012, 5(1): 107
作者单位
摘要
1 Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
2 Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
Si photonics germanium (Ge) tensile strained photoluminescence (PL) 
Frontiers of Optoelectronics
2012, 5(1): 112
作者单位
摘要
1 Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
2 Advance Research Laboratories, Tokyo City University, Tokyo 158-0082, Japan
Si-based light-emitting devices Ge selfassembled quantum dots microcavities photonic crystal (PhC) microdisk 
Frontiers of Optoelectronics
2012, 5(1): 13
作者单位
摘要
Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
photonic crystal (PhC) waveguide highquality (high-Q) cavity channel-drop filter negative refraction 
Frontiers of Optoelectronics
2012, 5(1): 21
作者单位
摘要
School of Physics and State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871, China
surface plasmon (SP) silicon photonics photonic interconnect surface plasmon amplication by stimulated emission 
Frontiers of Optoelectronics
2012, 5(1): 3
作者单位
摘要
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
optoelectronic integration Ge photonic device 
Frontiers of Optoelectronics
2012, 5(1): 41
作者单位
摘要
State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
spontaneous emission (SE) silicon nanocrystal (Si-NC) surface plasmon polariton (SPP) Purcell effect 
Frontiers of Optoelectronics
2012, 5(1): 51
作者单位
摘要
1 The State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
2 Information and Communications College, Guilin University of Electronic Technology, Guilin 541004, China
waveguide surface plasmon polariton (SPP) profile properties 
Frontiers of Optoelectronics
2012, 5(1): 63
作者单位
摘要
1 Centre for Optical and Electromagnetic Research, State Key Laboratory of Modern Optical Instrumentations, Zhejiang University, Hangzhou 310058, China
2 Joint Research Center of Photonics of Zhejiang University and South China Normal University, South China Normal University, Guangzhou 510006, China
plasmonic hybrid plasmonic waveguide energy intensity integration density 
Frontiers of Optoelectronics
2012, 5(1): 68
作者单位
摘要
1 Key Laboratory of Weak Light Nonlinear Photonics Ministry of Education, Nankai University, Tianjin 300071, China
2 Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01314, Germany
silicon (Si) light emitting diodes doping engineering dislocation modulation doping 
Frontiers of Optoelectronics
2012, 5(1): 7
作者单位
摘要
Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
thermo-optic SiN Si waveguide rise time 
Frontiers of Optoelectronics
2012, 5(1): 73
作者单位
摘要
The State Key Laboratory of Advanced Optical Communication Systems and Networks, Peking University, Beijing 100871, China
narrow filter binary blazed grating full conical incidence polarization-independent 
Frontiers of Optoelectronics
2012, 5(1): 78
作者单位
摘要
1 Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
2 Quantum Science Research, Hewlett-Packard Laboratories, Palo Alto, CA 94304, USA
3 Tyndall National Institute, Lee Maltings, Photonics Building, Cork, Ireland
4 Photonics and Microwave Engineering Royal Institute of Technology Kista, Stockholm S-164 40, Sweden
electroabsorption effect Ge optical interconnections optical modulators quantum-confined Stark effect (QCSE) Ge/SiGe quantum wells (QWs) 
Frontiers of Optoelectronics
2012, 5(1): 82
作者单位
摘要
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors (IS), Chinese Academy of Sciences (CAS), Beijing 100083, China
silicon photonics optical modulator extinction ratio (ER) integration 
Frontiers of Optoelectronics
2012, 5(1): 90
作者单位
摘要
1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073, China
silicon/III-V laser unidirectional emission three-dimensional (3D) finite-difference time-doma on-chip interconnects 
Frontiers of Optoelectronics
2012, 5(1): 94
作者单位
摘要
State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
ordinary differential equation (ODE) silicon microring resonator analog signal processing (ASP) silicon-on-insulator (SOI) 
Frontiers of Optoelectronics
2012, 5(1): 99

中国光学学会成为FOC主办单位

    经新闻出版总署研究,同意Frontiers of Optoelectronics (《光电子前沿》)主办单位由高等教育出版社有限公司、华中科技大学变更为高等教育出版社有限公司、华中科技大学、中国光学学会,其中高等教育出版社有限公司为主要主办单位。(新出审字(2012)663号)

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