Opto-Electronic Advances
Search

2018, 1(2) Column

MORE

Opto-Electronic Advances 第1卷 第2期

Author Affiliations
Abstract
Opto-Electronic Advances
2018, 1(2): 1
Author Affiliations
Abstract
1 Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou 510632, China
2 Laboratory of Artificial-Intelligence Nanophotonics and CUDOS (Centre for Ultrahigh bandwidth Devices for Optical Systems), School of Science, RMIT University, Melbourne, Victoria 3001, Australia
Modification of reduced graphene oxide in a controllable manner provides a promising material platform for producing graphene based devices. Its fusion with direct laser writing methods has enabled cost-effective and scalable production for advanced applications based on tailored optical and electronic properties in the conductivity, the fluorescence and the refractive index during the reduction process. This mini-review summarizes the state-of-the-art status of the mechanisms of reduction of graphene oxides by direct laser writing techniques as well as appealing optical diffractive applications including planar lenses, information storage and holographic displays. Owing to its versatility and up-scalability, the laser reduction method holds enormous potentials for graphene based diffractive photonic devices with diverse functionalities.
graphene oxides nanophotonics direct laser writing 
Opto-Electronic Advances
2018, 1(2): 170002
Author Affiliations
Abstract
State Key Lab of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers (SDLs) emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently, the wavelength of GaSb based SDLs has been extended to 2.8 μm. The highest output power of the GaSb based SDLs has been reached to 17 W at the temperature of 20 ℃. By using active stabilization, the GaSb based SDL with line-width of 20 kHz and output power of 1 W was realized. Moreover, the shortest pulse obtained from the GaSb based SDLs was generated as short as 384 fs by incorporating semiconductor saturable absorber mirrors (SESAM) in the cavity.
semiconductor disk laser GaSb based 2 μm wavelength 
Opto-Electronic Advances
2018, 1(2): 170003

公告

地址: 四川省成都市双流区光电大道一号中科院光电所《光电进展》编辑部
邮政编码:610209
E-mail: oea@ioe.ac.cn
电话:028-85100579
网址: https://www.oejournal.org/oea
微信号:OE_Journal (光电期刊)