基于MoS2的可见光探测器和基于GaN的紫外探测器的单片集成

石墨烯被发现之后,研究人员又相继开发了多种二维层状材料,它们独特的光学和电学特性引起了科学界的兴趣。其中,二硫化钼(MoS2)作为一种典型的二维材料,因其在新型光电器件方面的应用受到了广泛关注。基于理论和实验的研究已经对二维MoS2材料的各种物理化学性能进行了详尽的研究,但是,其最终商业化应用的主要挑战是如何制备高质量大面积的二维MoS2。

近日,来自中国科学院长春光学精密机械与物理研究所的黎大兵教授课题组报道了通过化学气相沉积方法制备高质量大面积二维MoS2的最新成果,这为二维MoS2的商业化应用提供了材料制备基础。相关研究成果发表在Photonics Research 2019年第7卷第10期上(You Wu, Zhiwen Li, Kah-Wee Ang, Yuping Jia, Zhiming Shi, Zhi Huang, Wenjie Yu, Xiaojuan Sun, Xinke Liu, and Dabing Li, Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors)。

该项工作选择与MoS2晶格完美匹配的自支撑GaN作为化学气相沉积生长衬底,通过理论计算与实验相结合的研究方法,证明了GaN衬底的优越性,得到了高质量的单层MoS2材料,并进一步制备了基于MoS2的可见光探测和基于GaN的紫外光探测单片集成的双波段光探测器。该款探测器具备高光电流增益、高外部量子效率、高归一化检测率和低噪声等效功率,显示了优异的性能。基于GaN的紫外线探测器响应度为172.12 A/W,基于MoS2的可见光探测器的响应度为17.5 A/W。该工作提供了一种实现高集成度和多色光电检测的可行方案。其生长方法和器件制备工艺还可推广到其他二维材料体系,拓宽未来在图像传感和光通信方面的应用。

黎大兵教授相信,该工作成果在高集成度的光电器件应用方面具有重要意义,并且制备方法具有可移植性,对其他二维材料体系的应用同样具有很好的借鉴意义。下一步的研究目标是继续深入研究并改善大面积高质量二维材料的生长制备方法以及后续器件技术,以探索更高性能的多色光探测器。

基于MoS2的可见光探测器和基于GaN的紫外探测器的单片集成

Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors

Inspired by the discovery of graphene, researchers have developed a family of two-dimensional (2D) layered materials and investigated their unique optoelectronic properties. Molybdenum disulfide (MoS2), as a kind of typical 2D material, has been intensively investigated due to potential applications in novel electrical and optoelectronic devices. However, in spite of great efforts dedicated to 2D MoS2 study from both experiment and theory, the main challenge remained to be addressed is to achieve 2D MoS2 with high quality and large area, which is the key point for realization of its commercial application.

Recently, a research group led by Prof. Li from Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP) reported large-area and high-quality single-layer MoS2 grown by chemical vapor deposition (CVD), showing the possibility of breaking the growth challenge by CVD method, which is published on Photonics Research (You Wu, Zhiwen Li, Kah-Wee Ang, Yuping Jia, Zhiming Shi, Zhi Huang, Wenjie Yu, Xiaojuan Sun, Xinke Liu, and Dabing Li, Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors, Volume 7, Issue 10, 2019).

In this work, free-standing GaN wafer was selected as the substrate for 2D MoS2 growth due to lattice-matching between GaN and MoS2. The theoretical and experimental methods were combined to prove the superiority of the GaN substrate, and a large-area and high-quality single-layer MoS2 was obtained.

Based on the successful preparation of 2D MoS2 film, the monolithic integration of high performance visible and ultraviolet dual-wavelength photodetectors is realized by semiconductor fabrication technologies. MoS2 and GaN are responsible for detection in visible and ultraviolet range, respectively. The dual-wavelength photodetector achieved excellent performance in photocurrent gain, external quantum efficiency, and normalized detection rate with low noise equivalent power. The peak photoresponsivity of the GaN-based UV detector is 172.12 A/W, while that of the MoS2-based visible detector is 17.5 A/W. This work provides a feasible solution for integrating multi-color detectors, and the growth methods and device preparation process could also be extended to other 2D material systems, which could broaden the future applications for image sensing and optical communication.

Prof. Li believes that the monolithic integrated dual-color detectors obtained in this work are of great significance for development of high-integration optoelectronic devices. The fabrication method is transplantable to other 2D system, and provides a good reference for the applications of other 2D material systems.

Based on present results, future work of Prof. Li's group will be focused on improvement in growth and device technique for large-area and high-quality 2D materials in order to explore other high-performance multi-color photodetectors.

Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors.