中国光学期刊网

Chalcopyrite Cu(In,Ga)Se2 (CIGS) thin films deposited in a low-temperature process (450 °C) usually produces fine grains and poor crystallinity. Herein, different Ag treatment processes, which can decrease the melting temperature and enlarge band gap of the CIGS films, were employed to enhance the quality of thin films in a low-temperature deposition process. It is demonstrated that both the Ag precursor and Ag surface treatment process can heighten the crystallinity of CIGS films and the device efficiency. The former is more obvious than the latter. Furthermore, the Urbach energy (EU) is also reduced with silver doping. This work aims to provide a feasible silver-doping process for the high-quality CIGS films in a low-temperature process.