压电与声光, 2023, 45 (1): 18, 网络出版: 2023-04-07  

高品质因数薄膜体声波谐振器的仿真与制备

Simulation and Preparation of Thin Film Bulk Acoustic Resonator with High Quality Factor
作者单位
1 华南理工大学 发光材料与器件国家重点实验室, 广东 广州 510640
2 广州市艾佛光通科技有限公司, 广东 广州 510700
摘要
该文研究了双层反射结构对薄膜体声波谐振器性能的影响。采用有限元方法建立了以氮化硅为支撑层, 氮化铝为压电层, 钼为电极的器件模型。首先探究反射层的宽度对输入阻抗的影响, 为了进一步验证仿真结果, 制备了空腔型薄膜体声波谐振器。研究结果表明, 当反射层的宽度为0.5 μm时, 器件的品质因数将得到极大增强。
Abstract
The effect of the double reflection layer on performance of thin film bulk acoustic resonator is studied in this paper. The finite element method is used to establish the model of the device with silicon nitride as the support layer, aluminum nitride as the piezoelectric layer and molybdenum as the electrode. Firstly, the influence of the width of the reflection layer on the input impedance is investigated. In order to further verify the simulation results, a cavity structure of thin film bulk acoustic resonator is prepared. The results show that when the width of the reflection layer is 0.5 μm, the quality factor of the device will be greatly enhanced.
参考文献

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赵利帅, 衣新燕, 欧阳佩东, 张铁林, 刘红斌, 李国强. 高品质因数薄膜体声波谐振器的仿真与制备[J]. 压电与声光, 2023, 45(1): 18. ZHAO Lishuai, YI Xinyan, OUYANG Peidong, ZHANG Tielin, LIU Hongbin, LI Guoqiang. Simulation and Preparation of Thin Film Bulk Acoustic Resonator with High Quality Factor[J]. Piezoelectrics & Acoustooptics, 2023, 45(1): 18.

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