Journal of Semiconductors, 2022, 43 (6): 062803, Published Online: Jun. 10, 2022  

Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis

Author Affiliations
1 The Institute of Future Lighting, Academy for Engineering and Technology, Fudan University (FAET), Shanghai 200433, China
2 Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
3 Beijing Const-Intellectual Core Technology Co. Ltd, Beijing 100029, China
Basic Information
DOI: 10.1088/1674-4926/43/6/062803
中图分类号: --
栏目: Articles
项目基金: --
收稿日期: Dec. 9, 2021
修改稿日期: --
网络出版日期: Jun. 10, 2022
通讯作者:
备注: --

Hao Wu, Xuanwu Kang, Yingkui Zheng, Ke Wei, Lin Zhang, Xinyu Liu, Guoqi Zhang. Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis[J]. Journal of Semiconductors, 2022, 43(6): 062803.

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