Journal of Semiconductors, 2022, 43 (5): 054102, Published Online: Jun. 10, 2022  

Uniform, fast, and reliable CMOS compatible resistive switching memory

Author Affiliations
1 Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2 University of Chinese Academy of Sciences, Beijing 100049, China
3 School of Integrated Circuits, Anhui University, Hefei 230601, China
4 Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
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Yunxia Hao, Ying Zhang, Zuheng Wu, Xumeng Zhang, Tuo Shi, Yongzhou Wang, Jiaxue Zhu, Rui Wang, Yan Wang, Qi Liu. Uniform, fast, and reliable CMOS compatible resistive switching memory[J]. Journal of Semiconductors, 2022, 43(5): 054102.

References

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Yunxia Hao, Ying Zhang, Zuheng Wu, Xumeng Zhang, Tuo Shi, Yongzhou Wang, Jiaxue Zhu, Rui Wang, Yan Wang, Qi Liu. Uniform, fast, and reliable CMOS compatible resistive switching memory[J]. Journal of Semiconductors, 2022, 43(5): 054102.

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