Photonics Research, 2019, 7 (11): 11001222, Published Online: Oct. 16, 2019  

Dynamic and nonlinear properties of epitaxial quantum dot lasers on silicon for isolator-free integration Download: 649次

Author Affiliations
1 LTCI, Télécom Paris, Institut Polytechnique de Paris, 46 rue Barrault, 75013 Paris, France
2 Materials Department, University of California, Santa Barbara, California 93106, USA
3 Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
4 Institute for Energy Efficiency, University of California, Santa Barbara, California 93106, USA
5 Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, USA
Abstract
This work investigates the dynamic and nonlinear properties of quantum dot (QD) lasers directly grown on silicon with a view to isolator-free applications. Among them, the chirp parameter, also named the αH factor, is featured through a thermally insensitive method analyzing the residual side-mode dynamics under optical injection locking. The αH at threshold is found as low as 0.32. Then, the nonlinear gain is investigated from the gain compression factor viewpoint. The latter is found higher for epitaxial QD lasers on silicon than that in heterogeneously integrated quantum well (QW) devices on silicon. Despite that, the power dependence of the αH does not lead to a large increase of the chirp coefficient above the laser’s threshold at higher bias. This effect is confirmed from an analytical model and attributed to the strong lasing emission of the ground-state transition, which transforms into a critical feedback level as high as 6.5 dB, which is 19 dB higher than a comparable QW laser. Finally, the intensity noise analysis confirms that QD lasers are overdamped oscillators with damping frequencies as large as 33 GHz. Altogether, these features contribute to fundamentally enhancing the reflection insensitivity of the epitaxial QD lasers. This last feature is unveiled by the 10 Gbit/s error-free high-speed transmission experiments. Overall, we believe that this work is of paramount importance for future isolator-free photonics technologies and cost-efficient high-speed transmission systems.

Jianan Duan, Heming Huang, Bozhang Dong, Justin C. Norman, Zeyu Zhang, John E. Bowers, Frédéric Grillot. Dynamic and nonlinear properties of epitaxial quantum dot lasers on silicon for isolator-free integration[J]. Photonics Research, 2019, 7(11): 11001222.

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