Journal of Semiconductors, 2020, 41 (7): 072905, Published Online: Sep. 10, 2021  

Gate-regulated transition temperatures for electron hopping behaviours in silicon junctionless nanowire transistors

Author Affiliations
1 School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
2 Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
3 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract
We investigate gate-regulated transition temperatures for electron hopping behaviours through discrete ionized dopant atoms in silicon junctionless nanowire transistors. We demonstrate that the localization length of the wave function in the spatial distribution is able to be manipulated by the gate electric field. The transition temperatures regulated as the function of the localization length and the density of states near the Fermi energy level allow us to understand the electron hopping behaviours under the influence of thermal activation energy and Coulomb interaction energy. This is useful for future quantum information processing by single dopant atoms in silicon.

Xinyu Wu, Weihua Han, Xiaosong Zhao, Yangyan Guo, Xiaodi Zhang, Fuhua Yang. Gate-regulated transition temperatures for electron hopping behaviours in silicon junctionless nanowire transistors[J]. Journal of Semiconductors, 2020, 41(7): 072905.

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