对太赫兹（THz）波的传输调控是THz光学系统设计、通信、成像应用等领域的基础技术之一。界面阻抗匹配效应可以用于实现高效THz波反射调控，但尚未见硅基界面阻抗设计实现THz波调控的报道。本研究利用自组装法在高阻硅基底上制备MXene膜层，通过增加膜层厚度改变其电阻特性，进而连续调节Si/MXene/空气界面阻抗，实现高效的THz波减反射。在接近阻抗匹配态时，界面THz波反射率减少幅度达83%，透过率衰减约为30%。还利用THz波层析扫描成像技术，得到了Si/MXene/空气界面阻抗变化导致的THz波反射强度变化趋势。设计的具有高效THz波反射调控性能的Si基功能界面为THz波传输调控提供了一种新思路。

Efficient regulation of terahertz (THz) waves is crucial for their utilization in THz optical system, communications, imaging, etc. High-efficiency THz wave reflection regulation can be achieved through interface impedance matching. However, there have been no reports of THz wave regulation achieved via silicon-based interface impedance design. In this study, MXene films were fabricated on high-resistance silicon substrates using the self-assembly method, and their resistance were changed by increasing the thickness of the film. The impedance of the Si/MXene/air interface was continuously adjusted to achieve efficient THz wave attenuation. When approaching the impedance-matched state, the THz reflectivity at the interface is reduced by 83%, while the transmittance decays by approximately 30%. This study also confirmed the variation trend in THz wave reflection intensity resulting from the impedance change of the Si/MXene/air interface, employing THz wave tomography imaging technology. The silicon-based functional interface designed in this work, which offers efficient THz wave reflection regulation, presents a novel approach for achieving THz wave transmission regulation.