作为制备半导体晶圆的重要工序, 线锯切片对半导体晶圆的质量具有至关重要的影响。本文以发展最成熟的硅材料为例, 介绍了线锯切片技术的基本理论, 特别介绍了线锯切片技术的力学模型和材料去除机理, 并讨论了线锯制造技术及切片工艺对材料的影响。在此基础上, 综述了线锯切片技术在碳化硅晶圆加工中的应用和技术进展, 并分析了线锯切片技术对碳化硅晶体表面质量和损伤层的影响。最后, 本文指出了线锯切片技术在碳化硅晶圆加工领域面临的挑战与未来的发展方向。

Wire saw slicing technology has become a research hotspot in the field of slicing of brittle-and-hard materials. As an important process in semiconductor wafer processing, wire saw slicing has a crucial impact on the quality of semiconductor wafers. This paper introduces the basic theory and the research progress of wire saw slicing technology, taking the most mature silicon crystal as an example, especially the mechanical model and material removal mechanism of wire saw slicing. Then the influence of wire saw manufacturing technology and slicing process on the material is discussed. Furthermore, silicon carbide is a key material that supports the development of electric cars, clean energy and national defense industry because of its outstanding comprehensive advantages in physical properties, such as wider band gap. In this paper, the application and technological progress of wire saw slicing in silicon carbide wafer processing are reviewed. In addition, the influence of wire saw slicing on the surface quality and damage of silicon carbide crystal is analyzed. Finally, this paper points out the challenges and future development directions of wire saw slicing technology.