Chinese Optics Letters, 2024, 22 (1): 012501, Published Online: Jan. 9, 2024  

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Author Affiliations
1 College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
2 Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China
Abstract
Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable ability. Over the past several years, benefitting from the sustainable innovations in laser technology and the significant progress in materials technology, megawatt-class output power electrical pulses with a flexible frequency in the P and L microwave wavebands have been achieved by photoconductive semiconductor devices. Here, we mainly summarize and review the recent progress of the high-power photonic microwave generation based on the SiC photoconductive semiconductor devices in the linear modulation mode, including the mechanism, system architecture, critical technology, and experimental demonstration of the proposed high-power photonic microwave sources. The outlooks and challenges for the future of multi-channel power synthesis development of higher power photonic microwave using wide bandgap photoconductors are also discussed.

Tao Xun, Xinyue Niu, Langning Wang, Bin Zhang, Jinmei Yao, Yimu Yu, Hanwu Yang, Jing Hou, Jinliang Liu, Jiande Zhang. Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors[J]. Chinese Optics Letters, 2024, 22(1): 012501.

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