Photonics Research, 2020, 8 (2): 02000186, Published Online: Feb. 10, 2020  

Real-time, in situ probing of gamma radiation damage with packaged integrated photonic chips Download: 610次

Author Affiliations
1 Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
2 Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, USA
3 Department of Physics, University of Washington, Seattle, Washington 98195, USA
Figures & Tables

Fig. 1. (a) Top-view micrograph of the photonic chip showing the micro-ring resonators and the grating couplers; (b) photograph of the packaged photonic chip; (c) block diagram showing the in situ measurement setup. EDFA, erbium-doped fiber amplifier; GC, grating coupler; Opt. switch, optical switch; DUT, device under test. (d) Normalized transmittance spectra of a micro-ring resonator under test for both TE- and TM-polarized modes.

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Fig. 2. (a) Insertion loss change of the fiber-packaged chip during in situ irradiation: here the error bars (shaded regions) are defined as the device-to-device variations on the same chip; (b) resonance shift due to gamma irradiation; the three spectra correspond to 0, 3.6 Mrad, and 8.4 Mrad radiation doses, respectively; (c) extracting material index changes from device measurements following protocols described in the text. The insets show TE- and TM-polarized waveguide mode profiles for SiC waveguides; (d) extracting material loss change from device measurement.

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Fig. 3. In situ measured changes of (a) refractive indices and (b) optical losses in SiC and SiO2 induced by gamma ray irradiation; (c) TE mode intensity profile of the radiation-hard SiC waveguide device design; (d) projected TE-mode effective index change of the design in (c) based on measurement data in (a). The shaded regions in (a), (b), and (d) denote standard deviations of data taken on multiple devices on the same chip.

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Fig. 4. Post-irradiation relaxation of (a) refractive indices and (b) optical losses in SiC and SiO2. The shaded regions in (b) denote standard deviations of data taken on multiple devices on the same chip.

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Fig. 5. SIMS elemental depth profiles of (a) as-deposited and (b) irradiated a-SiC films.

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Table1. Calculated Displacement Damage Parameters in a-SiC at 10 Mrad Radiation Dose

Atom TypeMaximum Recoil Energy (eV)Compton Scattering Displacement Cross Section (Barn, 1022  cm2)Gamma Photon Fluence (cm2)Atomic Density (cm3)Density of Displacement Defects (cm3)
Silicon (Si)2040.451.9×10166.6×10225.6×1014
Carbon (C)4760.281.9×10163.4×10221.8×1014

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Qingyang Du, Jérôme Michon, Bingzhao Li, Derek Kita, Danhao Ma, Haijie Zuo, Shaoliang Yu, Tian Gu, Anuradha Agarwal, Mo Li, Juejun Hu. Real-time, in situ probing of gamma radiation damage with packaged integrated photonic chips[J]. Photonics Research, 2020, 8(2): 02000186.

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