Author Affiliations
Abstract
1 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 Beijing Smart-chip Microelectronics Technology Co., Ltd, Beijing 100083, China
3 Zhongguancun Xinhaizeyou Technology Co., Ltd, Beijing 100049, China
4 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
The silicon on glasses process is a common preparation method of micro-electro-mechanical system inertial devices, which can realize the processing of thick silicon structures. This paper proposes that indium tin oxides (ITO) film can serve as a deep silicon etching cut-off layer because ITO is less damaged under the attack of fluoride ions. ITO has good electrical conductivity and can absorb fluoride ions for silicon etching and reduce the reflection of fluoride ions, thus reducing the foot effect. The removal and release of ITO use an acidic solution, which does not damage the silicon structure. Therefore, the selection of the sacrificial layer has an excellent effect in maintaining the shape of the MEMS structure. This method is used in the preparation of MEMS accelerometers with a structure thickness of 100 μm and a feature size of 4 μm. The over-etching of the bottom of the silicon structure caused by the foot effect is negligible. The difference between the simulated value and the designed value of the device characteristic frequency is less than 5%. This indicates that ITO is an excellent deep silicon etch stopper material.The silicon on glasses process is a common preparation method of micro-electro-mechanical system inertial devices, which can realize the processing of thick silicon structures. This paper proposes that indium tin oxides (ITO) film can serve as a deep silicon etching cut-off layer because ITO is less damaged under the attack of fluoride ions. ITO has good electrical conductivity and can absorb fluoride ions for silicon etching and reduce the reflection of fluoride ions, thus reducing the foot effect. The removal and release of ITO use an acidic solution, which does not damage the silicon structure. Therefore, the selection of the sacrificial layer has an excellent effect in maintaining the shape of the MEMS structure. This method is used in the preparation of MEMS accelerometers with a structure thickness of 100 μm and a feature size of 4 μm. The over-etching of the bottom of the silicon structure caused by the foot effect is negligible. The difference between the simulated value and the designed value of the device characteristic frequency is less than 5%. This indicates that ITO is an excellent deep silicon etch stopper material.
SOG process DRIE cut-off layer ITO film foot effect 
Journal of Semiconductors
2023, 44(4): 044101
Xinyu Wu 1,2Weihua Han 1,2Xiaosong Zhao 1,2Yangyan Guo 1,2[ ... ]Fuhua Yang 1,2,3
Author Affiliations
Abstract
1 School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
2 Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
3 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
We investigate gate-regulated transition temperatures for electron hopping behaviours through discrete ionized dopant atoms in silicon junctionless nanowire transistors. We demonstrate that the localization length of the wave function in the spatial distribution is able to be manipulated by the gate electric field. The transition temperatures regulated as the function of the localization length and the density of states near the Fermi energy level allow us to understand the electron hopping behaviours under the influence of thermal activation energy and Coulomb interaction energy. This is useful for future quantum information processing by single dopant atoms in silicon.
Journal of Semiconductors
2020, 41(7): 072905
作者单位
摘要
1 中国科学院半导体研究所半导体集成技术工程研究中心, 北京 100083
2 中国科学院大学电子电气与通信工程学院, 北京 101408
3 中国科学院大学微电子学院, 北京 101408
最近二十年, 作为一种新型导航技术, 量子定位系统(QPS)因其特有的信息传输优势得到了飞速发展。简要介绍了卫星导航与惯性导航系统的原理及各自面临的问题, 阐述了量子定位导航系统的概念与基本原理、量子导航的优势、量子导航的分类及国内外发展状况, 并就目前量子导航所面临的问题及其发展前景提出了相应的观点。
量子光学 量子定位系统 卫星导航 量子通信 量子信息和处理 
激光与光电子学进展
2018, 55(9): 090003
费瑶 1,2何玉铭 1,2杨富华 1,2李兆峰 1,2,*
作者单位
摘要
1 中国科学院半导体研究所半导体集成技术工程研究中心, 北京 100083
2 中国科学院大学材料科学与光电技术学院, 北京 100049
波导环形谐振腔(WRR)是集成光通信以及光学传感器领域的关键器件之一, 其谐振曲线的形貌将影响系统的性能。针对谐振腔耦合器一阶超模传输损耗差异、谐振腔外直波导端面反射, 利用多光束干涉叠加原理, 得到了波导环形谐振腔输出谱线的表达式。利用基于单边带调制的光学矢量网络分析方法, 对制备的高横纵比的氮化硅光WRR进行了谐振曲线谱的测试, 证实了耦合器模式以及直波导端面反射对谐振曲线的影响, 实际测试曲线与理论仿真结果拟合较好。
集成光学 环形谐振腔 氮化硅光波导 耦合器 
中国激光
2018, 45(5): 0513001
作者单位
摘要
中国科学院半导体研究所集成技术工程研究中心, 北京 100083
对干涉型集成光学陀螺(IIOG)和谐振型集成光学陀螺(RIOG)进行了比较。为使两者具有可比性,两种陀螺采用相同参数的光路器件、相近的偏置调制方法以及相同面积和传输损耗的光波导萨尼亚克(Sagnac)效应敏感环。推导了采用方波调制的干涉型集成光学陀螺和采用三角波调制的谐振型集成光学陀螺的散粒噪声灵敏度的准确表达式,通过优化波导器件参数计算得到两种陀螺最优的散粒噪声灵敏度。结果表明:随着光波导传输损耗的降低,干涉型集成光学陀螺的散粒噪声灵敏度要优于谐振型集成光学陀螺。随着超低损耗光波导技术的发展,干涉型集成光学陀螺在精度提高上具有较大潜力。
光纤光学 陀螺仪 萨尼亚克效应 平面光波导 
激光与光电子学进展
2016, 53(8): 080601
作者单位
摘要
中国科学院半导体研究所, 北京 100083
为了提高太阳电池的利用率并降低系统成本, 需要采用最大功率跟踪(MPPT)控制策略使光伏阵列获得最大功率输出。在众多的MPPT控制方法中, 扰动观察法由于原理简单、易于实现而成为MPPT控制中应用和研究最为广泛的方法之一。但传统的扰动观察法在稳态下由于其固定的扰动步长会在最大功率点(MPP)附近形成振荡, 并且当外界环境发生快速变化时会出现误判断的现象。为了克服以上不足, 研究者们提出了很多改进方案。文章对这些改进方案进行了综述, 这些改进方案主要包括以下三类: 变步长的改进方法、改进的新方法以及与其他方法结合的扰动观察法。
光伏系统 最大功率跟踪 扰动观察法 变步长 改进的新方法 与其他方法结合的扰动观察法 PV system MPPT P&O variable steps novel improvements P&O combined with other methods 
半导体光电
2012, 33(4): 455
作者单位
摘要
中国科学院 半导体研究所 超晶格国家重点实验室, 北京 100083
设计了一种InGaAs/InAlAs雪崩光电二极管(APD),并利用MEDICI软件进行了模拟仿真。器件采用背入射探测方式。雪崩增益区采用埋层设计,省略了保护环等结构;并使用双层掺杂,有效降低了增益区电场的梯度变化。由于结构简单,因此仅需要利用分子束外延(MBE)生长精确控制每层结构即可。由于InAlAs材料的空穴与电子的离化率有较大的差异,因此器件具有较低的噪声因子。
单光子探测器 雪崩光电二极管 双层掺杂埋层结构 MEDICI软件 
激光与光电子学进展
2008, 45(9): 56
Author Affiliations
Abstract
1 Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
The basic idea of the finite element beam propagation method (FE-BPM) is described. It is applied to calculate the fundamental mode of a channel plasmonic polariton (CPP) waveguide to confirm its validity. Both the field distribution and the effective index of the fundamental mode are given by the method. The convergence speed shows the advantage and stability of this method. Then a plasmonic waveguide with a dielectric strip deposited on a metal substrate is investigated, and the group velocity is negative for the fundamental mode of this kind of waveguide. The numerical result shows that the power flow direction is reverse to that of phase velocity.
等离激元波导 有限元 束传播方法 负折射 000.3860 Mathematical methods in physics 130.0130 Integrated optics 240.0240 Optics at surfaces 
Chinese Optics Letters
2008, 6(8): 572
作者单位
摘要
南开大学物理系
采用被测样品本身做光声室窗,并采用反射镜将透射光反射回样品,使光声信号提高了1.5倍,用此光声室对单晶硅的频率特性进行了研究,其理论计算和实验结果符合得较好。
中国激光
1984, 11(8): 491

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