Author Affiliations
Abstract
1 GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunicationshttps://ror.org/043bpky34, Nanjing 210003, China
2 College of Arts & Science, National University of Defense Technology, Changsha 410003, China
3 School of Physical Science and Technology, Southwest University, Chongqing 400715, China
4 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
5 e-mail: yangjunbo@nudt.edu.cn
Micro-nano optomechanical accelerometers are widely used in automobile, aerospace, and other industrial applications. Here, we fabricate mechanical sensing components based on an electrically pumped GaN light-emitting diode (LED) with a beam structure. The relationship between the blueshift of the electroluminescence (EL) spectra and the deformation of the GaN beam structure based on the quantum-confined Stark effect (QCSE) of the InGaN quantum well (QW) structure is studied by introducing an extra mass block. Under the equivalent acceleration condition, in addition to the elastic deformation of GaN-LED, a direct relationship exists between the LED’s spectral shift and the acceleration’s magnitude. The extra mass block (gravitational force: 7.55×10-11 N) induced blueshift of the EL spectra is obtained and shows driven current dependency. A polymer sphere (PS; gravitational force: 3.427×10-12 N) is placed at the center of the beam GaN-LED, and a blueshift of 0.061 nm is observed in the EL spectrum under the injection current of 0.5 mA. The maximum sensitivity of the acceleration is measured to be 0.02 m/s2, and the maximum measurable acceleration is calculated to be 1.8×106 m/s2. It indicates the simultaneous realization of high sensitivity and a broad acceleration measurement range. This work is significant for several applications, including light force measurement and inertial navigation systems with high integration ability.
Photonics Research
2023, 11(9): 1583
作者单位
摘要
南京邮电大学 通信与信息工程学院,江苏 南京 210000
片上可集成光源一直是光通信领域的研究热点。磷化铟(InP)材料是构建通信波段光源的理想材料。本文采用标准半导体工艺在InP衬底上制备了圆盘形微腔发光器件。通过制备四种尺寸的圆盘微腔发光二极管,研究了尺寸大小对于器件的性能,包括光强、半高宽、中心波长偏移等参数的影响。本研究对于电驱动光源的制备和实现通信波段的光通信具有重要意义。
磷化铟 发光二极管 圆盘微腔 光谱调控 indium phosphide light emitting diodes disk microcavity spectra modulation 
发光学报
2023, 44(6): 1006

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