Peng Cao 1,2Tiancai Wang 1,3Hongling Peng 1,4Zhanguo Li 5[ ... ]Wanhua Zheng 1,2,3,4,*
Author Affiliations
Abstract
1 Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 College of Electronic and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
4 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
5 School of Physics, Changchun Normal University, Changchun 130022, China
6 Physics Department, Lancaster University, Lancaster LA1 4YB, UK
In this paper, we demonstrate nBn InAs/InAsSb type II superlattice (T2SL) photodetectors with AlAsSb as the barrier that targets mid-wavelength infrared (MWIR) detection. To improve operating temperature and suppress dark current, a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a SiO2 layer. These result in ultralow dark current density of 6.28×10-6 A/cm2 and 0.31 A/cm2 under -600 mV at 97 K and 297 K, respectively, which is lower than most reported InAs/InAsSb-based MWIR photodetectors. Corresponding resistance area product values of 3.20×104 Ω ·cm2 and 1.32 Ω ·cm2 were obtained at 97 K and 297 K. A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5 µm and a peak detectivity of 2.1×109 cm·Hz1/2/W were obtained at a high operating temperature up to 237 K.
mid-wavelength infrared photodetector InAs/InAsSb superlattice high operating temperature dark current 
Chinese Optics Letters
2024, 22(1): 012502
Tiancai Wang 1,2Peng Cao 1,2Hongling Peng 1,3,*Chuanwang Xu 1,2[ ... ]Wanhua Zheng 1,3,5,6,**
Author Affiliations
Abstract
1 Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 College of Electronic and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
4 Southwest Institute of Technology Physics, Chengdu 610041, China
5 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
6 Weifang Academy of Advanced Opto-electronic Circuits, Weifang 261021, China
In this paper, high-uniformity 2×64 silicon avalanche photodiode (APD) arrays are reported. Silicon multiple epitaxy technology was used, and the high performance APD arrays based on double-layer epiwafers are achieved for the first time, to the best of our knowledge. A high-uniformity breakdown voltage with a fluctuation of smaller than 3.5 V is obtained for the fabricated APD arrays. The dark currents are below 90 pA for all 128 pixels at unity gain voltage. The pixels in the APD arrays show a gain factor of larger than 300 and a peak responsivity of 0.53 A/W@M = 1 at 850 nm (corresponding to maximum external quantum efficiency of 81%) at room temperature. Quick optical pulse response time was measured, and a corresponding cutoff frequency up to 100 MHz was obtained.
avalanche photodiode arrays silicon multiple epitaxy technology dark current 
Chinese Optics Letters
2023, 21(3): 032501
作者单位
摘要
中国科学院半导体研究所,集成光电子学国家重点联合实验室,超晶格国家重点实验室,北京 100083
利用低温(200℃)生长的GaAs材料作为吸收层制备了GaAs基1.55μm谐振腔增强型(RCE)光电探测器,对其光电特性进行了分析、研究.无光照0偏压下探测器暗电流为8.0×10-12A;光电流谱峰值波长1563nm;响应谱线半宽4nm,具有良好的波长选择性.
探测器 谐振腔增强 分布布喇格反射镜 Detector LT-GaAs LT-GaAs RCE DBR 
光子学报
2006, 35(4): 0549
Author Affiliations
Abstract
State Key Laboratory on Integrated Optoelectronics, National Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083
Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35 microns for a 20-micron ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy (MBE) growth conditions, the QD density per layer is raised to 4*10^(10) cm^(-2). The laser keeps lasing at ground state until the temperature reaches 65 Celsius degree.
160.6000 Semiconductors, including MQW 140.5960 Semiconductor lasers 
Chinese Optics Letters
2006, 4(7): 413

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