The distribution of metal nanoparticles on the surface of a surface enhancement Raman scattering (SERS)-active substrate plays a prominent part in not only the enhancement of Raman vibration signal, but also the spectrum uniformity. Here, a facile method to fabricate SERS substrates with excellent homogeneity and low cost was proposed, in which a lyotropic liquid crystal soft template was introduced for the coordinated growth of the silver nanoflowers in the process of electrochemistry deposition. Simulation was carried out to illustrate the dominated influence of the distance of electrodes on the deposited nanoparticle number. Two kinds of conductive materials, silver plate and indium tin oxide (ITO) glass, were chosen as the anode, while the cathode was fixed as ITO glass. The simulated conjecture on the effect of electrode flatness on the uniformity of deposited nanoparticles in silver is experimentally proved. More importantly, it was demonstrated that with a relatively smooth and flat ITO glass anode, a SERS substrate featuring higher spectrum uniformity could be achieved. This work is of great significance to the actual applications of the SERS substrate for quantitative detection with high sensitivity.

随机并行梯度下降（SPGD）算法广泛应用于光学系统静态像差校正，其性能指标对校正效果影响较大。由于传统的环围能量（EE）校正精度低、平均半径（MR）稳定性差，提出性能指标组合法，以实现静态像差的高精度、稳定校正。所提方法将EE与MR性能指标相结合进行像差校正，首先以EE作为性能指标对畸变图像进行校正，待能量集中于环围区域后，利用MR性能指标继续进行校正，直至能量分布均匀，校正终止。首先进行了校正仿真，结果显示：相比于EE和MR方法，性能指标组合法对静态像差的校正精度高、稳定性好。搭建实验光路，验证了所提方法的有效性。模拟和实验结果均表明，采用性能指标组合法可以获得高的校正精度且校正稳定。该方法可以应用于光学系统静态像差的校正和消除，实现其接近衍射极限的光学性能。

相比于第三代半导体材料碳化硅（SiC）和氮化镓（GaN），氧化镓（Ga₂O₃）具有禁带宽度更大、击穿电场更强、吸收截止边更短、生长成本更低等优点。掺杂是一种高效优化材料物性特征的方法，可以拓宽Ga₂O₃在不同领域的应用范围。本文对近年来Ga₂O₃材料的稀土掺杂以及其他元素的掺杂进行了综述，着重分析了稀土掺杂Ga₂O₃的发光特性。最后，对Ga₂O₃的稀土离子掺杂和p型掺杂方向进行了展望。

GaN∶Eu 3+作为红光发射材料,在GaN基单片集成全色显示器件应用方面具有很大的潜力。目前的研究重点是如何进一步调控和优化GaN∶Eu 3+材料的发光特性,促使其迈向实用阶段。本文主要从生长调控,Mg 2+、Zn 2+、Si 4+元素共掺调控,其他稀土元素共掺调控等方面综述了GaN∶Eu 3+材料发光特性的研究进展,比较各调控方法的应用潜力,指出GaN∶Eu 3+材料今后的研究重点,并对该领域的发展趋势进行了展望。

Er ions are implanted into the GaN thick films grown by hydride vapor phase epitaxy. The implantation energy is 200 keV and the implantation doses are 1×1013, 1×1014, 1×1015, and 5×1015 atom/cm2, respectively. The effects of the implantation dose and annealing temperature on the GaN band-edge luminescence are investigated. The cathodoluminescence spectra from 82 to 323 K are measured for 1×1015 atom/cm2-implanted GaN annealed at 1100°C. Luminescence peaks at 356, 362, 376, 390, and 414 nm are observed on the 82 K cathodoluminescence spectrum. When the temperature is increased to 150 K, the intensities of the 356 and 414 nm peaks are nearly unchanged and the 362, 376, and 390 nm peaks disappear. The intensity ratio of 538 nm (H11/22→I15/24) and 559 nm (S3/24→I15/24) is increased with the increase in temperature. We try to shed light on the above interesting phen