Author Affiliations
Abstract
1 School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
2 Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
4 Institute of Intelligence Sensing in Zhengzhou University, Zhengzhou 450001, China
We investigated the effect of charge trapping on electrical characteristics of silicon junctionless nanowire transistors which are fabricated on heavily n-type doped silicon-on-insulator substrate. The obvious random telegraph noise and current hysteresis observed at the temperature of 10 K indicate the existence of acceptor-like traps. The position depth of the traps in the oxide from Si/SiO2 interface is 0.35 nm, calculated by utilizing the dependence of the capture and emission time on the gate voltage. Moreover, by constructing a three-dimensional model of tri-gate device structure in COMSOL Multiphysics simulation software, we achieved the trap density of 1.9 × 1012 cm–2 and the energy level position of traps at 0.18 eV below the intrinsic Fermi level.
Journal of Semiconductors
2022, 43(5): 054101
作者单位
摘要
郑州大学物理工程学院, 河南 郑州 450000
基于表面等离子激元的纳米激光器能够将光源的尺寸降低几个数量级,结合表面等离子体波可将波长限制在纳米尺度内传输,突破衍射极限,从而实现与电子学器件的尺寸相匹配,最终实现整个光互连系统的小型化和低功耗。简述了表面等离子激元的基本原理,对近年来的表面等离子激元纳米激光器的研究工作进行了总结,详细介绍了各种结构及其优势,指出了该类激光器在开发过程中面临的挑战和今后的工作重点,展望了纳米激光器广泛的应用前景。
激光器 表面等离子激元 混合表面等离子体波导 回音壁模式 
激光与光电子学进展
2019, 56(20): 202409

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!