通过设计生态混凝土植生试验以及包含3种坡面状况、4种边坡坡度、3种降雨强度的冲刷试验对生态混凝土的植生性能及其与植物结合后的抗冲刷性能展开研究。植生试验结果表明: 植生20天时, 生态混凝土组植株最高为22.5 cm, 植物斑化指数为95.37%, 植物覆盖率为102.6%, 生态混凝土组与素土组的植物茎叶生长状况相差不大, 但素土组植物根系普遍更长; 植生40天时, 两组根系分布范围接近。冲刷试验结果表明: 素土边坡与生态混凝土覆土边坡的土体流失量在特定条件下会随降雨累积量的增加产生激增, 而生态混凝土植生边坡的土体流失量在各条件下均未激增; 相同冲刷条件下抗冲刷性能为生态混凝土植生边坡＞生态混凝土覆土边坡＞素土边坡。

Droplet controllable manipulation over a wide temperature range has promising applications in microelectronic heat dissipation, inkjet printing, and high temperature microfluidic system. However, the fabrication of a platform for controllable droplet manipulation using the methods commonly used in industry remains a tremendously challenge. The popular method of controlling droplets is highly dependent on external energy input and has relatively poor controllability in terms of droplet motion behaviors and manipulation environment, such as distance, velocity, direction and a wide temperature range. Here, we report a facile and industrially applicable method for preparing Al superhydrophobic (S-phobic) surfaces, which enables controlled droplet bouncing, evaporation, and transport over a wide temperature range. Systematic mechanistic studies are also investigated. Extreme wettability surfaces were prepared on Al substrate by a composite process of electrochemical mask etching and micro-milling. To investigate the evaporation process and thermal coupling characteristics, controlled evaporation and controlled bouncing of droplet in a wide temperature range were conducted. Based on the evaporation regulation and bouncing mechanism of droplets on an extreme wettability surface, by using Laplace pressure gradients and temperature gradients, we realized controlled transport of droplets with confluence, split-flow, and gravity-resistant transport over a wide temperature range, offering a potential platform for a series of applications, such as new drug candidates and water collection.

针对当前微机电系统(MEMS)发展对小型化封装的需求，设计了一种高可靠性、低成本、高深宽比的硅通孔(TSV)结构工艺流程。该工艺流程的核心是双面盲孔电镀，将TSV结构的金属填充分为正、反两次填充，最后获得了深度为155 μｍ、直径为41 μｍ的TSV结构。使用功率器件分析仪对TSV结构的电学性能进行了测试，使用X光检测机和扫描电子显微镜(SEM)分别观察了TSV结构内部的缺陷分布和填充情况。测试结果证明，TSV样品导电性能良好，电阻值约为1.79×10-3 Ω，孔内完全填充，没有空洞。该研究为实现MEMS的小型化封装提供了一种解决方法。

针对MEMS系统中硅通孔(TSV)的热可靠性, 利用快速热处理技术(RTP)进行了温度影响的实验分析。通过有限元分析(FEA)方法得到不同温度热处理后TSV结构的变化趋势, 利用RTP对实验样品进行了不同温度的热处理实验, 使用扫描电子显微镜和光学轮廓仪表征了样品发生的变化。结果表明, 热处理后TSV中Cu柱的凸起程度与表面粗糙度均随热处理温度的升高而增加, 多次重复热处理与单次热处理的结果基本相同。该项研究为TSV应用于极端环境下MEMS小型化封装提供了一种解决方案。