何天将 1,2刘素平 1,*李伟 1林楠 1,2[ ... ]马骁宇 1,2
作者单位
摘要
1 中国科学院半导体研究所 光电子器件国家工程研究中心,北京 100083
2 中国科学院大学 材料科学与光电技术学院,北京 100049
在GaAs基GaInP/AlGaInP单量子阱结构外延片上分别使用磁控溅射设备生长ZnO薄膜和等离子增强化学气相沉积设备生长SiO2薄膜,以ZnO介质层作为Zn杂质诱导源,采用固态扩Zn的方式对激光器进行选择性区域诱导以制备非吸收窗口来提高器件的腔面光学灾变损伤阈值,从而提高半导体激光器的输出功率和长期可靠性。在580~680 ℃、20~60 min退火条件下对Zn杂质诱导量子阱混杂展开研究,实验发现,ZnO/SiO2或ZnO/Si3N4复合介质层的采用比单一Zn介质层的杂质诱导蓝移量大,且在680 ℃、30 min的条件下获得了最大55 nm的蓝移量。分析结果表明,介质层所施加的压应变会将外延片表面GaAs层中Ga原子析出,促使Zn原子进入外延层中以诱导量子阱混杂。通过测量光致发光光谱发现发光强度并没有明显下降,可为后期器件制作提供借鉴。
半导体激光器 量子阱混杂 复合介质层 蓝移 非吸收窗口 Semiconductor laser Quantum well intermixing Composite dielectric layer Blue shift Non-absorption window 
光子学报
2024, 53(1): 0114001
Tianjiang He 1,2Suping Liu 1,*Wei Li 1,2Li Zhong 1,2[ ... ]Zhennuo Wang 1,2
Author Affiliations
Abstract
1 National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
Output power and reliability are the most important characteristic parameters of semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs on the cavity surface, will seriously damage the further improvement of the output power and affect the reliability. To improve the anti-optical disaster ability of the cavity surface, a non-absorption window (NAW) is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mixing (QWI) induced by impurity-free vacancy. Both the principle and the process of point defect diffusion are described in detail in this paper. We also studied the effects of annealing temperature, annealing time, and the thickness of SiO2 film on the quantum well mixing in a semiconductor laser with a primary epitaxial structure, which is distinct from the previous structures. We found that when compared with the complete epitaxial structure, the blue shift of the semiconductor laser with the primary epitaxial structure is larger under the same conditions. To obtain the appropriate blue shift window, the primary epitaxial structure can use a lower annealing temperature and shorter annealing time. In addition, the process is less expensive. We also provide references for upcoming device fabrication.
catastrophic optical damage primary epitaxial structure impurity-free vacancy disordering quantum well intermixing non-absorption window 
Journal of Semiconductors
2023, 44(10): 102302
作者单位
摘要
1 中国科学院上海光学精密机械研究所超强激光科学与技术重点实验室,上海 201800
2 中国科学院上海光学精密机械研究所信息光学与光电技术实验室,上海 201800
3 中国科学院大学,北京 100049
4 中国科学院上海光学精密机械研究所精密光学工程部(筹),上海 201800
锡液滴发生器是激光等离子体型极紫外(LPP-EUV)光刻光源中最重要的核心部件之一。光刻光源要求锡液滴靶具备高重复频率、小直径且稳定性好的特性。综述了中国科学院上海光学精密机械研究所EUV光源团队近年来在液滴发生器方面的研究进展,包括液滴直径、重复频率、间距、位置和稳定性等。现阶段研制的锡液滴发生器,在100 kHz频率下喷射的锡液滴直径约为40 μm,间距约为230 μm,工作时长接近5 h。锡液滴在10 s短时间内,竖直和水平方向的位置不稳定性分别约为2 μm和1 μm。未来锡液滴的可用性性能(如液滴直径、工作时长和长时间的位置稳定性)还需进一步提升。
极紫外 光刻光源 液滴发生器 锡液滴 extreme ultraviolet lithography source droplet generator tin droplets 
激光与光电子学进展
2023, 60(23): 2314001
作者单位
摘要
1 中国原子能科学研究院 国家原子能机构抗辐照应用技术创新中心, 北京 102413
2 中国科学院半导体研究所 光电子器件国家工程中心, 北京 100083
3 中国科学院大学 材料科学与光电技术学院, 北京 101408
4 日立科学仪器(北京)有限公司, 北京 100012
腔面光学灾变损伤是导致高功率量子阱半导体激光器阈值输出功率受限制的关键因素。通过量子阱混杂技术调整半导体激光器腔面局部区域处有源区材料的带隙宽度,形成对输出光透明的非吸收窗口,可提高激光器输出功率。本文基于InGaAs/AlGaAs高功率量子阱半导体激光器初级外延片,以外延Si单晶层作为扩散源,结合快速热退火方法开展了杂质诱导量子阱混杂研究。探索了介质层生长温度、介质层厚度、热处理温度、热处理时间等条件对混杂效果的影响。结果表明,50 nm的650 °C低温外延Si介质层并结合875 °C/90 s快速热退火处理可在保证光致发光谱的同时获得约57 nm的波长蓝移量。能谱测试发现,Si杂质扩散到初级外延片上的波导层是导致量子阱混杂效果显著的关键。
半导体激光器 量子阱混杂 快速热退火 波长蓝移 光致发光谱 semiconductor lasers quantum well intermixing rapid thermal annealing blue shift photoluminescence spectra 
中国光学
2023, 16(6): 1512
张秋月 1,2林楠 1,*黄婷 1,2刘素平 1[ ... ]张志刚 3
作者单位
摘要
1 中国科学院半导体研究所光电子器件国家工程研究中心,北京 100083
2 中国科学院大学材料科学与光电技术学院,北京 100049
3 北京大学信息科学技术学院,北京 100871
为了提高应用于光纤激光器的多量子阱半导体可饱和吸收镜(SESAM)的特性参数,对其结构进行优化,模拟分析了不同量子阱周期数对器件电场分布、调制深度及反射光谱等参数的影响,结果表明,SESAM中吸收层量子阱周期数越大,SESAM在1064 nm处的反射率越低,调制深度越高,在低反射率处的带宽越窄,可饱和吸收镜对生长误差的容忍度也越小。利用金属有机化合物气相沉积(MOCVD)方法对3种量子阱周期数结构的SESAM进行外延生长,通过非线性测试及锁模实验对3种结构的样品进行测量与表征,结果表明,3种结构的SESAM均实现了自启动锁模,其稳定锁模的泵浦区间为150~200 mW。采用泵浦探测技术对15个量子阱周期的SESAM进行动态响应测试,其响应恢复时间为5 ps。
激光器 超快激光器 半导体可饱和吸收镜 泵浦探测 lasers ultrafast lasers semiconductor saturable absorber mirror pump-probe 
光学学报
2023, 43(22): 2214001
Author Affiliations
Abstract
1 School of Microelectronics, Shanghai University, Shanghai, China
2 Department of Precision Optics Engineering, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, China
With the development of high-volume manufacturing for very-large-scale integrated circuits, the purity of the light source in the extreme ultraviolet lithography (EUVL) system needs to fulfil extreme requirements in order to avoid thermal effect, optical distortion and critical dimension errors caused by out-of-band radiations. This paper reviews the key technologies and developments of the spectral purity systems for both a free-standing system and a built-in system integrated with the collector. The main challenges and developing trends are also discussed, with a view towards practical applications for further improvement. Designing and manufacturing spectral purity systems for EUVL is not a single task; rather, it requires systematic considerations for all relevant modules. Moreover, the requirement of spectral purity filters drives the innovation in filtering technologies, optical micromachining and advanced metrology.
collector mirror extreme ultraviolet lithography spectral purity filter 
High Power Laser Science and Engineering
2023, 11(5): 05000e64
Wenhe Yang 1,2Nan Lin 1,2,*Xin Wei 1,2Yunyi Chen 1,2[ ... ]Jianda Shao 2,**
Author Affiliations
Abstract
1 School of Microelectronics, Shanghai University, Shanghai 200072, China
2 Department of Precision Optics Engineering, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Overlay (OVL) for patterns placed at two different layers during microchip production is a key parameter that controls the manufacturing process. The tolerance of OVL metrology for the latest microchip needs to be at nanometer scale. This paper discusses the influence on the accuracy and sensitivity of diffraction-based overlay (DBO) after developing inspection and after etching inspection by the asymmetrical deformation of the OVL mark induced by chemical mechanical polishing or etching. We show that the accuracy and sensitivity of DBO metrology can be significantly improved by matching the measuring light wavelength to the thickness between layers and by collecting high-order diffraction signals, promising a solution for future OVL metrology equipment.
diffraction-based overlay overlay metrology accuracy lithography semiconductor microchip 
Chinese Optics Letters
2023, 21(7): 071204
作者单位
摘要
1 中国原子能科学研究院国家原子能机构抗辐照应用技术创新中心,北京 102413
2 中国科学院半导体研究所光电子器件国家工程中心,北京 100083
3 中国科学院大学材料科学与光电技术学院,北京 100049
针对典型卫星轨道辐射环境下激光二极管(LD)的可靠性评估问题,对自研的975 nm GaAs基量子阱(QW)LD开展了10 MeV质子、3×108~3×1011 cm-2注量的地面模拟辐照实验。结合蒙特卡罗软件仿真模拟和数学分析方法,全面研究了器件位移损伤退化规律,以及不同注量、不同辐照缺陷对器件功率特性、电压特性和波长特性等关键参数的影响。结果显示,质子辐照会引入非辐射复合中心等缺陷并破坏界面结构,导致载流子浓度降低、光电限制能力下降,宏观上体现为器件阈值电流增加、输出功率下降、波长红移和单色性受损。同时,3×1010 cm-2以上注量的10 MeV质子等效位移损伤剂量辐照会对975 nm QW LD性能产生较大影响。
量子光学 量子阱激光二极管 质子 位移损伤效应 性能评估 quantum optics quantum well laser diode proton displacement damage effect performance evaluation 
光学学报
2023, 43(11): 1127001
Author Affiliations
Abstract
1 National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability. To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers, Si–Si3N4 composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window. Si with a thickness of 100 nm and Si3N4 with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source, respectively. Compared with traditional Si impurity induced quantum well intermixing, this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 °C and annealing time of 10 min. Under this annealing condition, the wavelength of the gain luminescence region basically does not shift to short wavelength, and the surface morphology of the whole epitaxial wafer remains fine after annealing. The application of this process condition can reduce the difficulty of production and save cost, which provides an effective method for upcoming fabrication.The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability. To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers, Si–Si3N4 composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window. Si with a thickness of 100 nm and Si3N4 with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source, respectively. Compared with traditional Si impurity induced quantum well intermixing, this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 °C and annealing time of 10 min. Under this annealing condition, the wavelength of the gain luminescence region basically does not shift to short wavelength, and the surface morphology of the whole epitaxial wafer remains fine after annealing. The application of this process condition can reduce the difficulty of production and save cost, which provides an effective method for upcoming fabrication.
Journal of Semiconductors
2022, 43(8): 082301
Author Affiliations
Abstract
1 College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha 410072, China
2 Hunan Aerospace Magnet & Magneto Co., LTD, Changsha 410200, China
3 State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment, Guangzhou 510006, China
4 Jihua Laboratory, Foshan 528251, China
There is growing recognition that the developments in piezoresistive devices from personal healthcare to artificial intelligence, will emerge as de novo translational success in electronic skin. Here, we review the updates with regard to piezoresistive sensors including basic fundamentals, design and fabrication, and device performance. We also discuss the prosperous advances in piezoresistive sensor application, which offer perspectives for future electronic skin. There is growing recognition that the developments in piezoresistive devices from personal healthcare to artificial intelligence, will emerge as de novo translational success in electronic skin. Here, we review the updates with regard to piezoresistive sensors including basic fundamentals, design and fabrication, and device performance. We also discuss the prosperous advances in piezoresistive sensor application, which offer perspectives for future electronic skin.
electronic skin piezoresistive sensor biocompatibility 
Opto-Electronic Advances
2022, 5(8): 210029

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