Jingxuan Chen 1,2†Mingjin Wang 1,3†Ting Fu 1,2Yufei Wang 1,4,6,*[ ... ]Wanhua Zheng 1,2,3,4,5,7,*
Author Affiliations
Abstract
1 Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Scienceshttps://ror.org/034t30j35, Beijing 100083, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
4 College of Future Technology, University of Chinese Academy of Sciences, Beijing 101408, China
5 Weifang Academy of Advanced Opto-Electronic Circuits, Weifang 261021, China
6 e-mail: yufeiwang@semi.ac.cn
7 e-mail: whzheng@semi.ac.cn
Zero-energy topological states, which are protected by chiral symmetry against certain perturbations topologically, localize at interfaces between trivial and non-trivial phases in the Su–Schrieffer–Heeger (SSH) chain model. Here, we propose and demonstrate a method to manipulate chiral symmetry itself to improve the localized interfaces and enlarge the mode volume of topological states in the SSH model, thus optimizing the lasing performance of localized interfaces. As multiple defects corresponding to off-diagonal perturbations in an eigenmatrix are introduced, the topological state expands and extends to extra defects at the topological interface without breaking chiral symmetry. We apply the proposed method in electrical pumping semiconductor laser arrays to verify our theoretical prediction and optimize the output characteristics of the devices. The measured results of the proposed multi-defect SSH laser array show that the output power has been increased by 27%, and the series resistance and far-field divergence have been reduced by half compared to the traditional SSH laser array, establishing a high-performance light source for integrated silicon photonics, infrared light detection and ranging, and so on. Our work demonstrates that the proposed method is capable of improving topological localized interfaces and redistributing zero-energy topological states. Furthermore, our method can be applied to other platforms and inspire optimizations of more devices in broader areas.
Photonics Research
2023, 11(9): 1517
Jing Liu 1,2,*Mingjin Wang 1Yufei Wang 1,2,3,4Xuyan Zhou 1[ ... ]Wanhua Zheng 1,2,3,4,5,**
Author Affiliations
Abstract
1 Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
4 College of Future Technology, University of Chinese Academy of Sciences, Beijing 101408, China
5 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
A high peak power density and low mechanical stress photonic-band-crystal (PBC) diode laser array based on non-soldered packaging technology is demonstrated. The array consists of the PBC diode laser bars with small fast axis divergence angles. Meanwhile, we design the non-soldered array structure that realizes mechanical stacking of 10 bars in the vertical direction. In the experiment, the peak power density of the PBC array is about 1.75 times that of the conventional array when the same total power is obtained. The peak power of the non-soldered array is 292.2 W, and the “smile” effect is improved by adjusting the mechanical fixing force of the array.
photonic-band-crystal non-soldered packaging low mechanical stress 
Chinese Optics Letters
2022, 20(7): 071403
傅廷 1,3王宇飞 1,2王学友 1,3陈静瑄 1,3[ ... ]郑婉华 1,2,3,4,*
作者单位
摘要
1 中国科学院半导体研究所固态光电信息技术重点实验室, 北京 100083
2 中国科学院大学未来技术学院, 北京 101408
3 中国科学院大学材料科学与光电工程研究中心, 北京 100049
4 中国科学院半导体研究所集成光电子学国家重点实验室, 北京 100083

激光器是一种高亮度、高效率和高相干性的功率转换器件,特别是在半导体激光器系统中,不仅存在折射率的高低分布,而且还同时存在增益和损耗分布,是一个天然的非厄米光学系统。通过引入微结构调控激光器的折射率和增益损耗分布,可以在基于半导体激光芯片的光学平台上实现宇称时间对称、超对称等物理效应,并实现对激光器的空间光场和频域光谱的调控,从而获得高性能的新型微结构激光器。其中,宇称时间对称有望改善激光器的光谱、近场和远场分布,而超对称有望实现单侧模大功率输出。本文主要从这些物理效应的基本原理出发,综述了基于宇称时间对称和超对称的激光器的相关工作,探讨了新型微结构激光器的可能发展方向。

激光器 非厄米光子学 宇称时间对称 超对称 lasers non-Hermitian photonics parity-time symmetry supersymmetry 
中国激光
2021, 48(12): 1201005
作者单位
摘要
四川大学物理科学与技术学院,微电子技术四川省重点实验室,成都 610064
本文研究了SiO2/Si、SiNX/Si、Al2O3/Si这三种具有不同介电常数(k)栅介质材料结构在1.7 MeV电子辐照前后的傅里叶红外光谱。随着辐照剂量的增大,三种结构的吸收峰强度均随之减小,其振动模式受到影响。电子辐照SiO2/Si结构后,振动吸收峰随着辐照剂量的增大,由Si-O-Si、Si-O键引起的伸缩振动吸收峰的位置向低波数移动。电子辐照SiNX/Si结构后,由Si-N键、Si-O键引起的伸缩振动吸收峰的位置向高波数移动。电子辐照Al2O3/Si结构后,由Al2O3的晶格振动,Al-O-Al键引起的伸缩振动吸收峰的位置向高波数移动。吸收峰的变化为电子辐照不同介质材料引入的缺陷提供了新的信息。
电子辐照 高k介质 electron irradiation high k materials FTIR FTIR 
光散射学报
2018, 30(4): 379

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