Author Affiliations
Abstract
1 College of Science, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
2 e-mail: cxkan@nuaa.edu.cn
SnO2 has attracted considerable attention due to its wide bandgap, large exciton binding energy, and outstanding electrical and optoelectronic features. Owing to the lack of reliable and reproducible p-type SnO2, many challenges on developing SnO2-based optoelectronic devices and their practical applications still remain. Herein, single-crystal SnO2 microwires (MWs) are acquired via the self-catalyzed approach. As a strategic alternative, n-SnO2 MW/p-GaN heterojunction was constructed, which exhibited selectable dual-functionalities of light-emitting and photodetection when operated by applying an appropriate voltage. The device illustrated a distinct near-ultraviolet light-emission peaking at 395.0 nm and a linewidth 50 nm. Significantly, the device characteristics, in terms of the main peak positions and linewidth, are nearly invariant as functions of various injection current, suggesting that quantum-confined Stark effect is essentially absent. Meanwhile, the identical n-SnO2 MW/p-GaN heterojunction can also achieve photovoltaic-type light detection. The device can steadily feature ultraviolet photodetecting ability, including the ultraviolet/visible rejection ratio (R360 nm/R400 nm) 1.5×103, high photodark current ratio of 105, fast response speed of 9.2/51 ms, maximum responsivity of 1.5 A/W, and detectivity of 1.3×1013 Jones under 360 nm light at -3 V bias. Therefore, the bifunctional device not only displays distinct near-ultraviolet light emission, but also has the ability of high-sensitive ultraviolet photodetection. The novel design of n-SnO2 MW/p-GaN heterojunction bifunctional systems is expected to open doors to practical application of SnO2 microstructures/nanostructures for large-scale device miniaturization, integration and multifunction in next-generation high-performance photoelectronic devices.
Photonics Research
2021, 9(12): 12002475
赵敏 1许彤 1程二威 1周星 1[ ... ]陈亚洲 1,*
作者单位
摘要
1 陆军工程大学 电磁环境效应重点实验室,石家庄 050003
2 河北德海电子科技有限公司,石家庄 050200
针对无人机在飞行过程中其数据链系统容易受到外界电磁干扰而导致链路中断的问题,以某型无人机数据链系统为研究对象,提出了一种基于前门耦合的电磁敏感度注入效应试验方法。基于该方法开展了某型无人机数据链系统电磁敏感度效应试验,得到了该数据链系统的敏感度阈值曲线,确定了其电磁敏感度阈值,分析了机载数据链接收机射频前端的工作原理和电磁干扰作用下接收机的信号传输过程,揭示了组合频率干扰和带外饱和干扰对无人机机载数据链的作用机理,最后进行了试验验证。在实验研究的基础上,从电磁兼容设计层面和自适应控制策略方面分别有针对性地提出了相应的防护方法。
数据链 电磁干扰 敏感度效应试验 作用机理 防护方法 data link electromagnetic interference sensitive effect experiment mechanism of action protection method 
强激光与粒子束
2021, 33(3): 033005
作者单位
摘要
空军工程大学导弹学院, 陕西 三原 713800
为了解决三维空间蛇形机动目标跟踪算法中模型失配的问题, 提出了新的“S-蛇形”机动目标模型。该模型基于研究分析了平面内原始机动转弯模型, 考虑目标在垂直方向做简单的匀速直线运动, 对二维机动转弯模型进行了三维补维, 但经仿真分析发现, 此模型在机动变轨处出现“折返”现象, 为了克服此缺点, 又对该模型的状态转移矩阵进行了修正, 提出了一种新的“S-蛇形”机动目标模型, 该模型能够很好地匹配蛇形机动目标真实运动轨迹。最后在扩展卡尔曼滤波算法(EKF)中应用该模型, 对真实蛇形机动目标进行滤波跟踪, 通过Monte-Carlo仿真, 结果验证了此算法跟踪精度高, 也进一步证明了改进模型的合理性和实用性, 并已经初步应用于某新型**装备跟踪系统调试中。
机动转弯模型 “S-蛇形”机动目标模型 扩展卡尔曼滤波算法 Coordinated Turn(CT)model “S-maneuver” coordinated turn (SCT) model EKF algorithm 
电光与控制
2012, 19(9): 13
作者单位
摘要
1 华中光电技术研究所—武汉光电国家实验室, 湖北 武汉 430073
2 海军驻江南造船集团军事代表室, 上海 200011
针对典型海空目标的识别要求,介绍了一种基于统计学的目标识别方法。该方法通过对图片、视频或实时采集的图像进行预处理、目标分割、边界搜索、内部填充等处理后,提取目标的统计学特征,根据目标的特征值和数据库中的已有样本对未知目标进行识别。对5种舰船三维模型在不同方位角和俯仰角的平面投影图像进行了实验,识别概率能达到80%以上。实验结果表明,在被测目标样本充足的情况下,该方法能达到较高的识别率。
统计学 目标识别 特征值 样本 statistics target identification feature value sample 
光学与光电技术
2009, 7(3): 67

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