Author Affiliations
Abstract
1 School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
2 Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
4 Institute of Intelligence Sensing in Zhengzhou University, Zhengzhou 450001, China
We investigated the effect of charge trapping on electrical characteristics of silicon junctionless nanowire transistors which are fabricated on heavily n-type doped silicon-on-insulator substrate. The obvious random telegraph noise and current hysteresis observed at the temperature of 10 K indicate the existence of acceptor-like traps. The position depth of the traps in the oxide from Si/SiO2 interface is 0.35 nm, calculated by utilizing the dependence of the capture and emission time on the gate voltage. Moreover, by constructing a three-dimensional model of tri-gate device structure in COMSOL Multiphysics simulation software, we achieved the trap density of 1.9 × 1012 cm–2 and the energy level position of traps at 0.18 eV below the intrinsic Fermi level.
Journal of Semiconductors
2022, 43(5): 054101
Xinyu Wu 1,2Weihua Han 1,2Xiaosong Zhao 1,2Yangyan Guo 1,2[ ... ]Fuhua Yang 1,2,3
Author Affiliations
Abstract
1 School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
2 Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
3 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
We investigate gate-regulated transition temperatures for electron hopping behaviours through discrete ionized dopant atoms in silicon junctionless nanowire transistors. We demonstrate that the localization length of the wave function in the spatial distribution is able to be manipulated by the gate electric field. The transition temperatures regulated as the function of the localization length and the density of states near the Fermi energy level allow us to understand the electron hopping behaviours under the influence of thermal activation energy and Coulomb interaction energy. This is useful for future quantum information processing by single dopant atoms in silicon.
Journal of Semiconductors
2020, 41(7): 072905

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!