Author Affiliations
School of Artificial Intelligence, Hebei University of Technology, Tianjin, 300130, China
In order to solve the problem that blade fixing bolt cannot be detected quickly and conveniently in the field in actual production, this paper proposed a field rapid detection method of wind turbine blade fixing bolt defects based on field programmable gate array (FPGA), and Yolov4-tiny is selected as the basic algorithm. Nonetheless, the original Yolov4-tiny was not suitable for detecting small defects, so this paper improved the Yolov4-tiny to enhance the detection effect. Next, the convolutional operations in the algorithm were encapsulated into intellectual property (IP) cores by high-level synthesis (HLS) and Vivado, and parallel computation was realized using FPGA features. In the end, using Python to call the IP core and the FPGA hardware library, this paper achieved the purpose of rapid detection. Compared with traditional detection methods and other algorithms, the accuracy and speed of this method are significantly improved, which has a good application value.
2022, 18(9): 541
Xinyu Wu 1,2Weihua Han 1,2Xiaosong Zhao 1,2Yangyan Guo 1,2[ ... ]Fuhua Yang 1,2,3
Author Affiliations
1 School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
2 Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
3 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
We investigate gate-regulated transition temperatures for electron hopping behaviours through discrete ionized dopant atoms in silicon junctionless nanowire transistors. We demonstrate that the localization length of the wave function in the spatial distribution is able to be manipulated by the gate electric field. The transition temperatures regulated as the function of the localization length and the density of states near the Fermi energy level allow us to understand the electron hopping behaviours under the influence of thermal activation energy and Coulomb interaction energy. This is useful for future quantum information processing by single dopant atoms in silicon.
Journal of Semiconductors
2020, 41(7): 072905

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