Fanlu Zhang 1†Zhicheng Su 1†Zhe Li *Yi Zhu [ ... ]Lan Fu *
Author Affiliations
Miniaturized light sources at telecommunication wavelengths are essential components for on-chip optical communication systems. Here, we report the growth and fabrication of highly uniform p-i-n core-shell InGaAs/InP single quantum well (QW) nanowire array light emitting diodes (LEDs) with multi-wavelength and high-speed operations. Two-dimensional cathodoluminescence mapping reveals that axial and radial QWs in the nanowire structure contribute to strong emission at the wavelength of ~1.35 and ~1.55 μm, respectively, ideal for low-loss optical communications. As a result of simultaneous contributions from both axial and radial QWs, broadband electroluminescence emission with a linewidth of 286 nm is achieved with a peak power of ~17 μW. A large spectral blueshift is observed with the increase of applied bias, which is ascribed to the band-filling effect based on device simulation, and enables voltage tunable multi-wavelength operation at the telecommunication wavelength range. Multi-wavelength operation is also achieved by fabricating nanowire array LEDs with different pitch sizes on the same substrate, leading to QW formation with different emission wavelengths. Furthermore, high-speed GHz-level modulation and small pixel size LED are demonstrated, showing the promise for ultrafast operation and ultracompact integration. The voltage and pitch size controlled multi-wavelength high-speed nanowire array LED presents a compact and efficient scheme for developing high-performance nanoscale light sources for future optical communication applications.
InGaAs/InP quantum well nanowires LEDs 
Opto-Electronic Science
2023, 2(5): 230003
Author Affiliations
1 Department of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Pokfulam Road, Hong Kong, China
2 Department of Applied Physics, Xi'an Jiaotong University, Xi'an 710049, China
Native point defects in ZnO are so complicated that most of them are still debating issues, although they have been studied for decades. In this paper, we experimentally reveal two sub-components usually hidden in the low energy tail of the main broad green luminescence band peaking at 547 nm (~2.267 eV) in intentionally undoped ZnO single crystal by selecting the below-band-gap (BBG) optical excitations (e.g. light wavelengths of 385 nm and 450 nm). Moreover, both sub-components are manifested as long persistent phosphorescence once the BBG excitations are removed. With the aid of a newly developed model, the energy depths of two electron traps involved within the long lived orange luminescence are determined to be 44 meV and 300 meV, respectively. The candidates of these two electron traps are argued to be most likely hydrogen and zinc interstitials in ZnO.
zinc oxide defects phosphorescence photoluminescence 
Opto-Electronic Advances
2018, 1(6): 180011
1 Department of Physics, HKU-Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Hong Kong, China
2 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
In this paper, influence of temperature and reverse bias on photocurrent spectrum and spectral response of a monolithic GaInP/GaAs double-junction solar cell was investigated in detail. Two sharp spectral response offsets, corresponding to the bandedge photo absorption of the bottom GaAs and the top GaInP subcells, respectively, show the starting response points of individual subcells. More interestingly, the cell photocurrent was found to enhance significantly with increasing the temperature. In addition, the cell photocurrent also increases obviously as the reverse bias voltage increases. The integrated photocurrent intensity of the top GaInP subcell was particularly addressed. A theoretical model was proposed to simulate the reverse bias dependence of the integrated photocurrent of the GaInP subcell at different temperatures.
GaInP alloy GaInP alloy GaAs GaAs solar cell solar cell photocurrent photocurrent 
Frontiers of Optoelectronics
2016, 9(2): 306
武汉电信器件公司,湖北 武汉430074
文章对40 Gbit/s PIN/TIA组件的光纤耦合进行了理论分析,并进行了一些实验研究。通过使用紫外胶和精细固化方法, 进行了光纤耦合固定,使得40 Gbit/s PIN/TIA组件灵敏度达到国内领先水平。经测试,40 Gbit/s PIN光纤精细对准后的响应度可达0.65 A/W,耦合固定后的光响应度超过0.46 A/W。
光耦合 高斯光束 锥形光纤 楔形光纤 光响应度 紫外胶 optical coupling Gaussian beam coniform optical fiber cuneiform optical fiber optical responsivity UV adhesive 
2006, 32(3): 51

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