Yuanxin Tan 1,3,4Haotian Lv 1Jian Xu 2,*Aodong Zhang 2[ ... ]Ya Cheng 2,3,***
Author Affiliations
Abstract
1 Shandong Provincial Engineering and Technical Center of Light Manipulations & Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China
2 XXL—The Extreme Optoelectromechanics Laboratory, School of Physics and Electronics Science, East China Normal University, Shanghai 200241, China
3 Joint Research Center of Light Manipulation Science and Photonic Integrated Chip of East China Normal University and Shandong Normal University, East China Normal University, Shanghai 200241, China
4 Collaborative Innovation Center of Light Manipulation and Applications, Shandong Normal University, Jinan 250358, China
To improve the processing efficiency and extend the tuning range of 3D isotropic fabrication, we apply the simultaneous spatiotemporal focusing (SSTF) technique to a high-repetition-rate femtosecond (fs) fiber laser system. In the SSTF scheme, we propose a pulse compensation scheme for the fiber laser with a narrow spectral bandwidth by building an extra-cavity pulse stretcher. We further demonstrate truly 3D isotropic microfabrication in photosensitive glass with a tunable resolution ranging from 8 μm to 22 μm using the SSTF of fs laser pulses. Moreover, we systematically investigate the influences of pulse energy, writing speed, processing depth, and spherical aberration on the fabrication resolution. As a proof-of-concept demonstration, the SSTF scheme was further employed for the fs laser-assisted etching of complicated glass microfluidic structures with 3D uniform sizes. The developed technique can be extended to many applications such as advanced photonics, 3D biomimetic printing, micro-electromechanical systems, and lab-on-a-chips.
simultaneous spatiotemporal focusing technique pulse compensation pulse stretcher 3D isotropic fabrication chemical etching 
Opto-Electronic Advances
2023, 6(10): 230066
作者单位
摘要
中国工程物理研究院 激光聚变研究中心,四川 绵阳 621900
高功率固体激光装置的负载问题是制约装置建设与运行的瓶颈问题。在高通量紫外纳秒激光辐照下,熔石英后表面的损伤不断产生和增长,严重限制了装置的负载能力。在提升熔石英抗损伤性能的基础上修复既有损伤,循环使用光学元件,是现阶段提升装置负载能力的主要手段。主要介绍了国内外近年来在熔石英损伤的规律与机制、光学元件循环处理的支撑技术以及提升负载能力的新材料与新技术方面所取得的重要进展。
高功率激光装置 熔石英 激光损伤 化学刻蚀 损伤修复 high-power laser facility fused silica laser-induced damage chemical etching damage mitigation 
强激光与粒子束
2023, 35(6): 061001
作者单位
摘要
中国电子科技南湖研究院, 嘉兴 314000
与传统硅基电子相比, 柔性电子因其独特的便携性、折叠卷曲性和生物相容性被广泛研究。柔性存储器作为柔性电子重要分支, 在可穿戴设备、智慧医疗、电子皮肤等领域展现出良好的应用前景。同时随着5G、人工智能、物联网等新一代信息技术深入应用, 市场对高密度、非易失、超低功耗柔性存储器的需求持续释放, 催生了柔性铁电存储器件的研究热潮。本文综述了近年来柔性无机铁电薄膜的制备及其在存储器领域应用进展。首先介绍了柔性铁电薄膜制造技术的发展情况, 包括柔性基板上的范德瓦耳斯异质外延、刚性基板上的化学蚀刻分层、新型二维(2D)铁电材料生长等, 然后介绍了基于无机铁电薄膜的柔性存储器的研究进展, 最后对柔性铁电存储器的未来发展进行了展望。
柔性 无机材料 铁电薄膜 范德瓦耳斯异质外延 化学蚀刻 二维铁电材料 存储器 flexible inorganic material ferroelectric thin film van der Waals heteroepitaxy chemical etching 2D ferroelectric material memory 
人工晶体学报
2023, 52(3): 380
许琳琳 1,2,*于海英 1,2张永锋 1,2
作者单位
摘要
1 内蒙古工业大学化工学院, 呼和浩特 010051
2 内蒙古自治区煤基固废高效循环利用重点实验室, 呼和浩特 010051
多孔硅具有比表面积大、发光性能良好等特点, 目前对于多孔硅的研究已经涉及到生物与化学传感器、药物递送、光催化、能源等领域。多孔硅中的孔隙可有效缓解硅在锂化时的体积膨胀, 缩短锂离子从电解液向硅本体扩散的距离, 促进高电流密度下的充放电过程。因此, 多孔硅在储能领域得到了广泛研究与发展。但是一些挑战仍然存在, 如制备成本、刻蚀机理、多孔结构的调控、多孔硅的电化学性能等还不能满足商业化应用的要求。本文对目前国内外多孔硅制备方法的研究进行了综述, 并详细介绍了多孔硅在锂离子电池领域的应用。最后, 对多孔硅材料在储能领域的发展进行了展望。
锂电池 负极材料 多孔结构 金属辅助化学腐蚀法 碳催化 lithium battery anode material porous structure metal-assisted chemical etching carbon catalysis 
人工晶体学报
2022, 51(11): 1983
作者单位
摘要
1 武汉理工大学硅酸盐建筑材料国家重点实验室, 武汉 430070
2 河北省沙河玻璃技术研究院, 河北 邢台 054000
采用化学刻蚀法, 在钠钙硅玻璃表面进行化学刻蚀。以正硅酸乙酯(TEOS)为前驱体制备纳米二氧化硅颗粒, 以十六烷基三甲基溴化铵(CTAB)控制其团聚度, 然后在化学刻蚀后的玻璃表面喷涂不同团聚度的纳米二氧化硅颗粒, 构建多级微纳结构, 进一步经全氟癸基三乙氧基硅烷(PFTS)修饰, 获得超疏水玻璃表面。利用扫描电子显微镜、接触角测量仪等测试方法对涂层的微观形貌、润湿性等进行了表征。结果表明: 所制备的玻璃表面具备牢固的超疏水特性, 经过600目砂纸循环摩擦50次后仍可保持水接触角为156.13°±2°。玻璃表面的超疏水性归因于低表面能物质PFTS和表面微纳结构的共同作用, 其较好的耐磨性归因于玻璃表面刚性的微米级粗糙结构与喷涂的纳米级SiO2颗粒在玻璃表面堆积形成的结构相互交错, 构成了更为耐磨的微-纳结构。
化学刻蚀 超疏水 纳米二氧化硅 耐磨性 喷涂法 chemical etching superhydrophobic nano-silica wear resistance spraying method 
硅酸盐学报
2022, 50(4): 929
Author Affiliations
Abstract
1 Leibniz Institute of Surface Engineering (IOM), Permoserstraße 15, 04318 Leipzig, Germany
2 JENOPTIK Optical Systems GmbH, Göschwitzer Straße 25, 07745 Jena, Germany
3 Institute of Manufacturing Science and Engineering, TU Dresden, 01062 Dresden, Germany
To meet the increasing market demand for optical components, Plasma Jet Machining (PJM) of Borosilicate Crown Glass (BCG), which can be an alternative to Fused Silica, is presented. Surface figure error correction was performed by applying reactive plasma jet etching, where a fluorine-containing microwave driven plasma jet is employed to reduce the figure error in a deterministic dwell-time controlled dry etching process. However, some of the glass constituents of BCG cause the formation of a residual layer during surface treatment which influences the local material removal. By heating the substrate to about TS = 325 °C to 350 °C during processing, the etching behavior can clearly be improved. Geometric conditions of the optical element nevertheless lead to a characteristic temperature distribution on the substrate surface, which requires an adjustment of the local dwell times in order to obtain the required material removal. Furthermore, the resulting local surface roughness is also influenced by the surface temperature distribution. It is shown that figure error can be significantly reduced by taking the local temperature distribution and resulting local etching rates into account. A subsequent polishing step smoothens roughness features occurring during etching to provide optical surface quality.To meet the increasing market demand for optical components, Plasma Jet Machining (PJM) of Borosilicate Crown Glass (BCG), which can be an alternative to Fused Silica, is presented. Surface figure error correction was performed by applying reactive plasma jet etching, where a fluorine-containing microwave driven plasma jet is employed to reduce the figure error in a deterministic dwell-time controlled dry etching process. However, some of the glass constituents of BCG cause the formation of a residual layer during surface treatment which influences the local material removal. By heating the substrate to about TS = 325 °C to 350 °C during processing, the etching behavior can clearly be improved. Geometric conditions of the optical element nevertheless lead to a characteristic temperature distribution on the substrate surface, which requires an adjustment of the local dwell times in order to obtain the required material removal. Furthermore, the resulting local surface roughness is also influenced by the surface temperature distribution. It is shown that figure error can be significantly reduced by taking the local temperature distribution and resulting local etching rates into account. A subsequent polishing step smoothens roughness features occurring during etching to provide optical surface quality.
Plasma Jet Machining Atmospheric Plasma Jet Reactive plasma jet etching Borosilicate Crown Glass Figure error Chemical etching 
Journal of the European Optical Society-Rapid Publications
2022, 18(1): 2022003
作者单位
摘要
1 石河子大学机械电气工程学院,新疆 石河子 832003
2 兵团工业技术研究院,新疆 石河子 832003
飞秒激光辅助化学刻蚀加工技术在高质量、高深径比、高可控性的微孔加工方面独具优势,为微孔的制备提供了新的途径和方法。在微全分析系统、光纤中的三维光流控系统、谐振器制造中具有很大的应用潜力。本文综述了近年来飞秒激光辅助化学刻蚀加工透明介质材料的研究进展,包括飞秒激光改性区对刻蚀速率影响、强酸强碱化学溶液对刻蚀效果的影响、化学刻蚀步骤工艺的优化、飞秒激光辅助化学刻蚀加工方法的应用等,总结了飞秒激光辅助化学刻蚀微通道、结构加工机理以及工艺等方面面临的挑战,并对今后的研究重点进行了展望。
激光光学 飞秒激光 化学刻蚀 透明材料 
激光与光电子学进展
2022, 59(19): 1900009
张序清 1,2,*罗昊 1李佳君 2王蓉 2[ ... ]皮孝东 1,2
作者单位
摘要
1 浙江大学硅材料国家重点实验室材料科学与工程学院,杭州 310027
2 浙江大学杭州国际科创中心,杭州 311200
碳化硅(SiC)具有禁带宽度大、电子饱和漂移速度高、击穿场强高、热导率高、化学稳定性好等优异特性,是制备高性能功率器件等半导体器件的理想材料。得益于工艺简单、操作便捷、设备要求低等优点,湿法腐蚀已作为晶体缺陷分析、表面改性的常规工艺手段,应用到了SiC晶体生长和加工中的质量检测以及SiC器件制造。根据腐蚀机制不同,湿法腐蚀可以分为电化学腐蚀和化学腐蚀。本文综述了不同湿法腐蚀工艺的腐蚀机理、腐蚀装置和应用领域,并展望了SiC湿法腐蚀工艺的发展前景。
碳化硅 湿法腐蚀 电化学腐蚀 化学腐蚀 晶体缺陷 晶体表面 silicon carbide wet etching electrochemical etching chemical etching crystal defect crystal surface 
人工晶体学报
2022, 51(2): 333
Author Affiliations
Abstract
1 State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment, School of Electromechnical Engineering, Guangdong University of Technology, Guangzhou 510006, People’s Republic of China
2 School of Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong
3 Guangdong ADA Intelligent Equipment Ltd, Foshan 510006, People’s Republic of China
4 Institute of Business Analysis and Supply Chain Management, College of Management, Shenzhen University, Shenzhen, People’s Republic of China
5 School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, United States of America
Solid-state nanopores with controllable pore size and morphology have huge application potential. However, it has been very challenging to process sub-10 nm silicon nanopore arrays with high efficiency and high quality at low cost. In this study, a method combining metal-assisted chemical etching and machine learning is proposed to fabricate sub-10 nm nanopore arrays on silicon wafers with various dopant types and concentrations. Through a SVM algorithm, the relationship between the nanopore structures and the fabrication conditions, including the etching solution, etching time, dopant type, and concentration, was modeled and experimentally verified. Based on this, a processing parameter window for generating regular nanopore arrays on silicon wafers with variable doping types and concentrations was obtained. The proposed machine-learning-assisted etching method will provide a feasible and economical way to process high-quality silicon nanopores, nanostructures, and devices. Supplementary material for this article is available online
sub-10 nm silicon nanopore array metal-assisted chemical etching silica-coated gold nanoparticles self-assembly machine learning 
International Journal of Extreme Manufacturing
2021, 3(3): 035104
陈力驰 1,2王耀功 1,2王文江 1,2麻晓琴 1,2[ ... ]张小宁 1,2
作者单位
摘要
1 1.西安交通大学 电子物理与器件教育部重点实验室, 西安 710049
2 2.西安交通大学 电子科学与工程学院, 西安 710049
3 3.生态环境部核与辐射安全中心, 北京 100082
量子限制效应使硅纳米线具有良好的场致发射特性, 结合多孔硅的准弹道电子漂移模型可提高场发射器件的性能。传统的金属辅助化学刻蚀法制备硅纳米线的效率较低, 本研究在传统方法的基础上引入恒流源, 提出电催化金属辅助化学刻蚀法, 高效制备了硅纳米线/多孔硅复合结构。在外加30 mA恒定电流的条件下, 硅纳米线的平均制备速率可达308 nm/min, 较传统方法提升了173%。研究了AgNO3浓度、刻蚀时间和刻蚀电流对复合结构形貌的影响规律; 测试了采用电催化金属辅助化学刻蚀法制备样品的场发射特性。结果显示样品的阈值场强为10.83 V/μm, 当场强为14.16 V/μm时, 电流密度为64 μA/cm2
电化学 金属辅助化学刻蚀法 硅纳米线 多孔硅 场发射 electrochemistry metal assisted chemical etching silicon nanowire porous silicon field emission 
无机材料学报
2021, 36(6): 608

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