Mn⁴⁺掺杂的氟化物红色荧光粉的耐湿性差，严重影响了白色发光二极管（WLEDs）的光色稳定性。本工作基于绿矾溶液的还原性，将K₂SiF₆∶Mn⁴⁺颗粒表面的Mn⁴⁺还原成可溶的低价态Mn²⁺，实现了氟化物粒子的表面钝化及高耐湿性。在水浸360 h后，表面钝化的K₂SiF₆∶Mn⁴⁺粒子的发光强度仍保持初始强度的95%，而未处理的K₂SiF₆∶Mn⁴⁺颗粒发光强度迅速降为初始值的46%。此外，采用绿矾溶液对表面已水解的氟化物荧光粉进行简单的浸泡，可使其完全恢复原来的发光强度。电感耦合等离子体-原子发射光谱、X射线光电子谱、元素能谱等表征结果显示，经绿矾溶液处理的K₂SiF₆∶Mn⁴⁺粒子表面的Mn⁴⁺浓度显著减小，证实了惰性壳层K₂SiF₆的形成，揭示了氟化物粒子耐湿性显著提升的原因。此外，经高温（85^{℃）高湿（85%）的条件老化1 000 h后，WLEDs器件中表面钝化的K₂SiF₆∶Mn4+粒子仍保持着100%的红色发光强度，明显高于未钝化的氟化物的59%，进一步证实了绿矾溶液钝化的K₂SiF₆∶Mn4+红色荧光粉具有非常优异的环境稳定性。}

在铜基金属卤化物Cs₃Cu₂I₅中掺杂Mn²⁺是拓宽发光范围的重要途径，但是已报道的掺杂方法大多需要高温、惰性气氛、较长时间和专用设备等。本工作将CsI固体粉末直接投加至CuI和MnCl₂的氢碘酸溶液中，在较低温度（60 ℃）、空气条件下快速（3 min）合成Mn²⁺掺杂Cs₃Cu₂I₅微晶，并测试了其结构和发光性能。通过系列对比实验，提出一种由反应物溶解度控制的“缓释生长-掺杂”机制，证实CsI固体粉末在高浓度氢碘酸中的缓慢溶解能够降低Cs₃Cu₂I₅晶体的生长速率，为Mn²⁺的低温、可控掺杂提供有利的动力学条件。该方法为全无机金属卤化物体系的掺杂发光和掺杂动力学研究提供了新的思路。

硅基光电子与CMOS工艺兼容，借助成熟的微电子加工工艺平台可以实现大规模批量生产，具有低成本、高集成度、高可靠性的优势。其中，硅基半导体探测器是目前应用最为广泛的可见光波段探测设备，将其工作频段拓展到近红外波段具有重要意义。由于硅的禁带宽度，硅基材料在近红外波段电磁波吸收存在明显限制，硅基探测器在近红外波段的应用受到挑战。根据纳米金属粒子发生局域表面等离子共振时产生的近场增强效应，提出了一种纳米金属粒子梯度掺杂的硅基结构。通过应用等效介质理论，模拟了复合硅基结构在可见光与近红外波段的吸收特性。结果表明：该结构在近红外波段具有电磁波吸收提升效果，并且当选择纳米金粒子梯度递增掺杂时，可以在610~1450 nm波段提升吸收性能，最高提升可达到10.7 dB。所提出的结构可以有效增强硅基材料在近红外波段的吸收效率，研究结果为硅基半导体探测器在近红外波段的应用提供了重要参考。

Topological nodal-line semimetals attract growing research attention in the photonic and optoelectronic fields due to their unique topological energy-level bands and fascinating nonlinear optical responses. Here, to the best of our knowledge, we first report the saturable absorption property of topological nodal-line semimetal HfGeTe and the related pulse modulation in passively Q-switched visible lasers. Few-layer HfGeTe demonstrates outstanding saturable absorption properties in the visible-light band, yielding the saturation intensities of 7.88, 12.66, and 6.64 µJ/cm² at 515, 640, and 720 nm, respectively. Based on an as-prepared few-layer HfGeTe optical switch and a Pr:LiYF₄ gain medium, Q-switched visible lasers are also successfully achieved at 522, 640, and 720 nm. The minimum pulse widths of the green, red, and deep-red pulsed lasers are 150, 125.5, and 420 ns, respectively. Especially for the green and red pulsed laser, the obtained pulse width is smaller than those of the low-dimensional layered materials. Our work sheds light on the application potential of topological nodal-line semimetals in the generation of visible pulsed lasers.

(Ga,Fe)Sb is a promising magnetic semiconductor (MS) for spintronic applications because its Curie temperature (T_C) is above 300 K when the Fe concentration is higher than 20%. However, the anisotropy constant K_u of (Ga,Fe)Sb is below 7.6 × 10³ erg/cm³ when Fe concentration is lower than 30%, which is one order of magnitude lower than that of (Ga,Mn)As. To address this issue, we grew Ga_1-x-yFe_xNi_ySb films with almost the same x (≈24%) and different y to characterize their magnetic and electrical transport properties. We found that the magnetic anisotropy of Ga_0.76-yFe_0.24Ni_ySb can be enhanced by increasing y, in which K_u is negligible at y = 1.7% but increases to 3.8 × 10⁵ erg/cm³ at y = 6.1% (T_C = 354 K). In addition, the hole mobility (μ) of Ga_1-x-yFe_xNi_ySb reaches 31.3 cm²/(V?s) at x = 23.7%, y = 1.7% (T_C = 319 K), which is much higher than the mobility of Ga_1-xFe_xSb at x = 25.2% (μ = 6.2 cm²/(V?s)). Our results provide useful information for enhancing the magnetic anisotropy and hole mobility of (Ga,Fe)Sb by using Ni co-doping.