在PEDOT∶PSS空穴传输层上气相沉积了CsPbBr₃和CsPbBrI₂全无机钙钛矿传输层和发光层，以PEDOT∶PSS/CsPbBr₃作为双空穴传输层，显著提高了基于CsPbBrI₂发光的全无机红光钙钛矿发光二极管（Perovskite light emitting diodes，PeLEDs）性能。相比基于PEDOT∶PSS空穴传输层的PeLEDs器件，其亮度、电流效率和外量子效率提升幅度分别达到了44%、157%和180%。器件性能提升一方面归因于PEDOT∶PSS/CsPbBr₃双空穴传输层的能级匹配提高了空穴传输效率，并有效抑制了PEDOT∶PSS酸性导致的激子猝灭；另一方面归因于生长在CsPbBr₃传输层上的CsPbBrI₂发光层具有更好的薄膜结晶质量。在PeLEDs中通过气相沉积生长传输层和发光层是一种简单有效的制备方案，在提高气相沉积全无机PeLEDs的性能方面有巨大潜力。

金属卤化物钙钛矿发光二极管（Perovskite light?emitting diodes，Pero?LEDs）器件结构中，空穴传输层（HTL）是影响Pero?LEDs效率的关键性因素之一。由于醋酸钴（Co（OAc）₂）薄膜具有优异的光电特性，所以选其作为绿光Pero?LEDs的HTL。然而，纯的钴基底薄膜存在传输载流子能力较差、薄膜粗糙度较大等问题。因此，本文通过引入有机小分子添加剂乙醇胺（ETA）来有效调控传输层中Co³⁺/Co²⁺比例，提升传输层的导电能力。同时，因ETA的加入可以减缓退火过程中前驱体溶液的析出结晶速度，从而形成粗糙度较小的HTL薄膜，进而有利于形成高质量的钙钛矿薄膜。基于掺杂的HTL，其最优器件亮度高达45 207 cd/m²，最大外量子效率（EQE）达到15.08%，是一种性能较好的新型HTL。

卤化铅钙钛矿具有高光吸收系数、长载流子扩散长度和高荧光量子效率等优异光电特性，成为当下光电探测器（PDs）研究领域的热点。但卤化铅钙钛矿的高生物毒性和低环境稳定性制约了该类器件的发展和应用，因此寻找低毒稳定的材料尤为重要。到目前为止，Sn、Ge、Sb、Bi等材料都已得到研究，其中铋基钙钛矿因其稳定、无毒和宽带隙等特性成为候选材料之一。影响PDs性能的因素很多，其中抑制暗电流是提升器件性能的重要手段之一。本文通过溶液旋涂无机化合物CuSCN取代传统PEDOT∶PSS作为空穴传输层（HTL），制备了结构为ITO/CuSCN/Cs₃Bi₂I₆Br₃/ZnO/Ag的p‐i‐n型光电探测器。CuSCN最低未占分子轨道（LUMO）能级为 -1.5 eV，与ITO电子注入势垒高达3.3 eV，远高于PEDOT∶PSS与ITO的电子注入势垒（1.8 eV），反向偏压下工作更能有效阻挡电子从ITO电极的注入，因此降低了探测器的暗电流。器件在自供电条件425 nm单色光照射下光电流达6.87×10^-6 A，暗电流低至3.52×10^-11 A，开关比超过10⁵，相比于基于PEDOT∶PSS空穴传输层的探测器提升了2个数量级。此外，该探测器的上升和下降时间都小于0.12 s，均优于基于PEDOT∶PSS空穴传输层的探测器，这可归因于CuSCN比PEDOT∶PSS具有更高的载流子传输迁移率。结果表明，ITO/CuSCN/Cs₃Bi₂I₆Br₃/ZnO/Ag结构的光电探测器具有自供电、高开关比、稳定、无毒等优点，为实现商业化提供了一种可行策略。

Despite that organic-inorganic lead halide perovskites have attracted enormous scientific attention for energy conversion applications over the recent years, the influence of temperature and the type of the employed hole transport layer (HTL) on the charge carrier dynamics and recombination processes in perovskite photovoltaic devices is still largely unexplored. In particular, significant knowledge is missing on how these crucial parameters for radiative and non-radiative recombinations, as well as for efficient charge extraction vary among different perovskite crystalline phases that are induced by temperature variation. Herein, we perform micro photoluminescence (μPL) and ultrafast time resolved transient absorption spectroscopy (TAS) in Glass/Perovskite and two different Glass/ITO/HTL/Perovskite configurations at temperatures below room temperature, in order to probe the charge carrier dynamics of different perovskite crystalline phases, while considering also the effect of the employed HTL polymer. Namely, CH₃NH₃PbI₃ films were deposited on Glass, PEDOT:PSS and PTAA polymers, and the developed Glass/CH₃NH₃PbI₃ and Glass/ITO/HTL/CH₃NH₃PbI₃ architectures were studied from 85 K up to 215 K in order to explore the charge extraction dynamics of the CH₃NH₃PbI₃ orthorhombic and tetragonal crystalline phases. It is observed an unusual blueshift of the bandgap with temperature and the dual emission at temperature below of 100 K and also, that the charge carrier dynamics, as expressed by hole injection times and free carrier recombination rates, are strongly depended on the actual pervoskite crystal phase, as well as, from the selected hole transport material.Despite that organic-inorganic lead halide perovskites have attracted enormous scientific attention for energy conversion applications over the recent years, the influence of temperature and the type of the employed hole transport layer (HTL) on the charge carrier dynamics and recombination processes in perovskite photovoltaic devices is still largely unexplored. In particular, significant knowledge is missing on how these crucial parameters for radiative and non-radiative recombinations, as well as for efficient charge extraction vary among different perovskite crystalline phases that are induced by temperature variation. Herein, we perform micro photoluminescence (μPL) and ultrafast time resolved transient absorption spectroscopy (TAS) in Glass/Perovskite and two different Glass/ITO/HTL/Perovskite configurations at temperatures below room temperature, in order to probe the charge carrier dynamics of different perovskite crystalline phases, while considering also the effect of the employed HTL polymer. Namely, CH₃NH₃PbI₃ films were deposited on Glass, PEDOT:PSS and PTAA polymers, and the developed Glass/CH₃NH₃PbI₃ and Glass/ITO/HTL/CH₃NH₃PbI₃ architectures were studied from 85 K up to 215 K in order to explore the charge extraction dynamics of the CH₃NH₃PbI₃ orthorhombic and tetragonal crystalline phases. It is observed an unusual blueshift of the bandgap with temperature and the dual emission at temperature below of 100 K and also, that the charge carrier dynamics, as expressed by hole injection times and free carrier recombination rates, are strongly depended on the actual pervoskite crystal phase, as well as, from the selected hole transport material.